This paper shows that an 8T SRAM cell is superior to a 6T cell in terms of cell area in a future process. At a 65-nm node and later, the 6T cell comprised of the minimum-channel-length transistors cannot make the minimum area because of threshold-voltage variation. In contrast, the 8T cell can employ the optimized transistors and achieves the minimum area even if it is used as a single-port SRAM. In a 32-nm process, the 8T-cell area is smaller than the 6T cell by 14.6% at a supply voltage of 0.8 V. We also discuss the area and access time comparisons between the 6T-SRAM and 8T-SRAM macros.

To achieve both of a high peak performance and low average power characteristics, frequency-voltage cooperative control processor has been proposed. The processor schedules its operating frequency according to the required computation power. Its operating voltage or body bias voltage is adequately modulated simultaneously to effectively cut down either switching current or leakage current, and it results in reduction of total power dissipation of the processor. Since a frequency-voltage cooperative control processor has two or more operating frequencies, there are countless scheduling methods exist to realize a certain number of cycles by deadline time. This proposition is frequently appears in a hard real-time system. This paper proves two important theorems, which give the power-minimum frequency scheduling method for any types of frequency-voltage cooperative control processor, such as Vdd-control type, Vth-control type and Vdd-Vth-control type processors.

We propose a low-power non-precharge-type two-port SRAM for video processing that exploits statistical similarity in images. To minimize the charge/discharge power on a read bitline, the proposed memory cell (MC) has ten transistors (10T), comprised of the conventional 6T MC, a readout inverter and a transmission gate for a read port. In addition, to incorporate three wordlines, we propose a shared wordline structure, with which the vertical cell size of the 10T MC is fitted to the same size as the conventional 8T MC. Since the readout inverter fully charges/discharges a read bitline, there is no precharge circuit on the read bitline. Thus, power is not consumed by precharging, but is consumed only when a readout datum is changed. This feature is suitable to video processing since image data have spatial correlation and similar data are read out in consecutive cycles. As well as the power reduction, the prechargeless structure shortens a cycle time by 38% compared with the conventional SRAM, because it does not require a precharge period. This, in turn, demonstrates that the proposed SRAM operates at a lower voltage, which achieves further power reduction. Compared to the conventional 8T SRAM, the proposed SRAM reduces a charge/discharge possibility to 19% (81% saving) on the bitlines. As the measurement result, we confirmed that the proposed 64-kb video memory in a 90-nm process achieves an 85% power saving on the read bitline, when considered as an H.264 reconstructed image memory. The area overhead is 14.4%.

Secret sharing is a method for distributing a secret among a party of participants. Each of them is allocated a share of the secret, and the secret can only be reconstructed when the shares are combined together. We have been proposing a secret sharing distributed database system (SSDDB) that uses a secret sharing scheme to improve confidentiality and robustness of distributed database systems. This paper proposes a vertical partitioning algorithm for the SSDDB, and evaluates the algorithm by computational experiments.

We propose a voltage control scheme for 6T SRAM cells that makes a minimum operation voltage down to 0.3 V under DVS environment. A supply voltage to the memory cells and wordline drivers, bitline voltage, and body bias voltage of load pMOSFETs are controlled according to read and write operations, which secures operation margins even at a low operation voltage. A self-aligned timing control with a dummy wordline and its feedback is also introduced to guarantee stable operation in a wide range of the supply voltage. A measurement result of a 64-kb SRAM in a 90-nm process technology shows that a power reduction of 30% can be achieved at 100 MHz. In a 65-nm 64-Mb SRAM, a 74% power saving is expected at 1/6 of the maximum operating frequency. The performance penalty by the proposed scheme is less than 1%, and area overhead is 5.6%.

In this paper, we describe a feed-forward dynamic voltage/clock-frequency control method enabling low power MPEG4 on multi-regulated voltage CPU with combining the characteristics of the CPU and the video encoding processing. This method theoretically achieves minimum low power consumption which is close to the hardware-level power consumption. Required processing performance for MPEG4 visual encoding totally depends on the activity of the sequence, and high motion sequence requires high performance and low motion sequence requires low performance. If required performance is predictable, lower power consumption can be achieved with controlling the adequate voltage and clock-frequency dynamically at every frame. The proposed method in this paper is predicting the required processing performance of a future frame using our unique feed-forward analysis method and controlling a voltage and frequency dynamically at every frame along with the forward analysis value. The simulation results indicate that the proposed feed-forward analysis method adequately predicts the required processing performance of every future frame, and enables to minimize power consumption on software basis MPEG4 visual encoding processing. In the case that CPU has Frequency-Voltage characteristics of 1.8 V @400 MHz to 1.0 V @189 MHz, the proposed method reduces the power consumption approximately 37% at high motion sequences or 65% at low motion sequences comparing with the conventional software video encoding method.

This paper compares areas between a 6T and 8T SRAM cells, in a dual-Vdd scheme and a dynamic voltage scaling (DVS) scheme. In the dual-Vdd scheme, we predict that the area of the 6T cell keep smaller than that of the 8T cell, over feature technology nodes all down to 32 nm. In contrast, in the DVS scheme, the 8T cell will becomes superior to the 6T cell after the 32-nm node, in terms of the area.