A 0.4 µm stacked gate cell for a 64 Mbit flash memory has been developed which has the Symmetrical Side Wall Diffusion Self Aligned (SSW-DSA) structure. Using the proposed SSW-DSA cell with p+ pockets at both the drain and the source, and adequate punchthrough resistance to scale the gate length down to sub-half-micron has been obtained. It is also demonstrated that the channel erasing scheme applying negative bias to the gate, which is adopted for the SSW-DSA cell, shows lower trapped charges after Write/Erase (W/E) cycles evaluated by a charge pumping technique, and results in better endurance an retention characteristics than conventional erasing schemes.

A contact-less cell with high capacitive-coupling ratio (HiCR) of 0.8, which is programmed and erased by Fowler-Nordheim (F-N) tunneling, has been developed for single 3 V power-supply 64 Mbit and future flash memories. A 1.50 µm2 cell area is obtained by using 0.4 µm technology. The HiCR cell structure is realized by 1) self-aligned definition of small tunneling regions underneath the floating-gate side wall and 2) an advanced rapid thermal process for 7.5 nm-thick tunnel-oxynitride. The internal-voltages used for PROGRAM and ERASE are8 V and 12 V, respectively. The use of low positive internal-voltages results in reducing total process step numbers compared with reported memory cells. The HiCR cell also realizes low power and fast random access with a single 3 V power-supply.