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Chun-Ping CHEN Junya ODA Tetsuo ANADA
To implement a wideband bandpass filter with improved skirt-selectivity and out-band characteristics, a new parallel-coupled three-line unit with two short-circuited stubs symmetrically-loaded at the center line is proposed. Unlike most traditional ones, the passband of the proposed parallel-coupled three-line structure is based on the cross-coupling between non-adjacent lines rather than the direct-coupling between adjacent ones, whereas a pair of attenuation poles is found in the stopbands. After revealing its work mechanism, an efficient filter-design-scheme is correspondingly proposed for the presented structure. Firstly, based on a chebyshev-filter synthesis theory, a wideband passband filter consisting of a parallel-coupled two-line and two short-circuited stubs loaded at the input- and output- ports is designed. Furthermore, by putting a properly-designed 3/4-wavelength stepped-impedance resonator (SIR) in between the parallel-coupled two lines, two attenuation poles are then realized at the frequencies very close to the cutoff ones. Accordingly, the roll-off characteristics of the filter are significantly-improved to greater than 100,dB/GHz. Furthermore, two-section open-ended stubs are used to replace the short-circuited ones to realize a pair of extra attenuation poles in stopbands. To validate the proposed techniques, a wideband filter with a bandwidth of 3--5,GHz (Fractional bandwidth (FBW) $= (5,GHz-3,GHz)/4,GHz =50%)$ was designed, simulated, fabricated and measured. The measured responses of the filter agree well with the simulation and theoretical ones, which validates the effectiveness of the newly-proposed three-line unit and the corresponding design scheme.
Toshihiko ITO Kenichi OKADA Akira MATSUZAWA
In this paper, a capacitive-cross-coupling common-gate (CCC-CG) LNA using capacitive feedback is proposed to improve the noise figure (NF). In the conventional CCC-CG LNA, the transconductance gm is determined by the input-matching condition while a lager gm is required to improve NF. gm of the proposed LNA can be increased and NF can be improved by using the added capacitive feedback. The analytical calculation shows that the proposed LNA can perform better than the conventional CCC-CG LNA. In the measurement results using a 0.18-µm CMOS technology, the gain is 10.4–13.4 dB, NF is 2.7–2.9 dB at 0.8–1.8 GHz, and IIP3 is -7 dBm at 0.8 GHz. The power consumption is 6.5 mW with a 1.8-V supply.
Takenori YASUZUMI Tomoki UWANO Osamu HASHIMOTO
A planar high-pass filter (HPF) by using cross-couplings in multi-layer structure is proposed in this paper. The HPF consists of parallel plate and gap type capacitors and inductor lines on the bottom conductor. The one block of the HPF has a ladder T-section in the bridge T configuration. The one block HPF is, thus, coarsely designed in the manner of the proto-type HPF and the performance is optimized by circuit simulator. With the gap capacitor adjusted the proposed HPF illustrates the steep slope characteristics near the cut-off frequency by the attenuation pole. In order to improve the stopband performance, the cascaded two block HPF is examined. Its measured results show the good agreement with the simulated ones giving the second attenuation pole by an inductive cross-coupling.
Viet-Hoang LE Hoai-Nam NGUYEN Sun-a KIM Seok-Kyun HAN Sang-Gug LEE
This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.42.6 dB noise figure (NF) over the entire operating band (0.72.7 GHz) while drawing 9 mA from a 1.8 V supply.