We have developed two modulator driver ICs that are based on the functional distributed circuit (FDC) topology for over 40-Gb/s optical transmission systems using InP HBT technology. The FDC topology enables both a wide bandwidth amplifier and high-speed digital functions. The none-return-to-zero (NRZ) driver IC, which is integrated with a D-type flip-flop, exhibits 2.6-Vp-p (differential output: 5.2 Vp-p) output-voltage swings with a high signal quality at 43 and 50 Gb/s. The return-to-zero (RZ) driver IC, which is integrated with a NRZ to RZ converter, produces 2.4-Vp-p (differential output: 4.8 Vp-p) output-voltage swings and excellent eye openings at 43 and 50 Gb/s. Furthermore, we conducted electro-optical modulation experiments using the developed modulator driver ICs and a dual drive LiNbO3 Mach-Zehnder modulator. We were able to obtain NRZ and RZ clear optical eye openings with low jitters and sufficient extinction ratios of more than 12 dB, at 43 and 50 Gb/s. These results indicate that the FDC has the potential to achieve a large output voltage and create high-speed functional ICs for over-40-Gb/s transmission systems.

A monolithic modulator driver IC based on InP HBTs with a new circuit topology -- called a functional distributed circuit (FDC) -- for over 80-Gb/s optical transmission systems has been developed. The FDC topology includes a wide-band amplifier designed using a distributed circuit, a digital function designed using a lumped circuit, and broadband impedance matching between the lumped circuit and distributed circuit to enable both wider bandwidth and digital functions. The driver IC integrated with a 2:1 multiplexing function produces 2.6-Vp-p (differential output: 5.2 Vp-p) and 2.4- Vp-p (differential output: 4.8 Vp-p) output-voltage swings with less than 450-fs and 530-fs rms jitter at 80 Gb/s and 90 Gb/s, respectively. To the best of our knowledge, this is equivalent to the highest data rate operation yet reported for monolithic modulator drivers. When it was mounted in a module, the driver IC successfully achieved electro-optical modulation using a dual-drive LiNbO3 Mach-Zehnder modulator up to 90 Gb/s. These results indicate that the FDC has the potential to realize high-speed and functional ICs for over-80-Gb/s transmission systems.

We propose a novel 50 Mb/s optical transmitter fabricated in a 0.6 µm BiCMOS technology for automotive applications. The proposed VCSEL driver chip was designed to operate with a single supply voltage ranging from 3.0 V to 5.25 V. A fully integrated feedforward current control circuit is presented to stabilize the optical output power without any external components. The experimental results show that the optical output power can be stable within a 1.1 dB range and the extinction ratio greater than 14 dB over the automotive environmental temperature range of -40 to 105.

It is very difficult to simultaneously achieve power and cost reductions in address-driver circuits of a plasma-display panel (PDP) unit in which an energy-recovery scheme utilizing the resonance of a series-connected inductor and electrode parasitic capacitors is used. This is because an increase in parasitic capacitance and high-speed circuit operation become necessary as the display panel becomes larger in size and higher in resolution. In particular, low-power operation of address-driver ICs is key to avoiding the installation of heat sinks on the ICs. We propose herein new power-dispersion methods that can greatly reduce the power dissipation of address-driver ICs even when large parasitic capacitance is driven at high speed. The proposed methods enable a reduction in the power dissipation of address-driver ICs without deteriorating the operational speed by dispersing their powers into external resistors, and by supplying power to address-driver ICs in two voltage steps during both rising and falling time intervals when the address changes. Our results indicate that the power dissipation of address-driver ICs and the total cost of the address drive unit of a plasma-display panel can be reduced to 29% and 53%, respectively, compared with those of the ICs and the unit that are driven by the conventional address-driving method.