This paper describes an MOS current-mode, voltage-controlled oscillator (VCO) circuit that potentially operates with a 2 V supply voltage, 500 MHz oscillation frequency, and -90 dBc/Hz phase noise at the 1 MHz offset. It also has an improved oscillation frequency linearity of the control voltage and 11 mW power dissipation. The oscillation frequency reached 920 MHz when the supply voltage was increased to 3 V.

This paper describes low-power and low-voltage analog circuit techniques applicable to deep sub-micron LSIs in baseband and RF signal processing. The trends indicate that reductions in the supply voltage are inevitable, that power dissipation will not become sufficiently low, and that performance will improve continuously. Some circuit techniques currently being used to achieve these goals are reviewed. Next, three trial approaches are introduced. The first of these is a 1 V operational video-speed CMOS sample-and-hold IC. The second is a 1 V operational high-frequency CMOS VCO circuit. Finally, a step-down DC-DC converter IC with a 1 V output and a greater than 80% power efficiency is introduced. These approaches prove that the low-power and low-voltage operation of analog circuits can be realized without sacrificing performance.

A MOS VCO which has improved linearity of oscillation frequency versus control voltage and has no 1/2 divider is studied. The improved VCO characteristic has been obtained by the use of only two additional transistors, one of which has a role of a load and another of which has a role of a control current source in a differential type delay cell.

In this paper, we propose the use of second-order slope compensation for a current-mode PWM buck converter. First, the current feedback loop in a current-mode PWM buck converter using a conventional slope compensation is analyzed by the small-signal transfer function. It becomes clear that the stability and frequency bandwidth of the current feedback loop is affected by the external input voltage and the output voltage of the converter. Next, the loop with second-order slope compensation is analyzed, and the result shows that the loop becomes unconditionally stable with the adoption of second-order slope compensation with appropriate parameter values and a current sensing circuit whose current is sensed across an impedance that is inversely proportional to the input voltage. In order to verify our theory, we designed whole circuits of a current-mode PWM buck converter including the new inductor current sensing circuit and the second-order voltage generator circuit using device parameters from the 0.6 µm CMOS process. The circuit simulation results under the conditions of 4 MHz switching frequency, 3.6 V input voltage and 2.4 V output voltage are presented.

This paper introduces a power-efficient on-chip DC-DC converter, which produces a 1.0 V output by being stepped-down from a 3.6 V input, utilizes a 10 µH external inductor, and realizes more than 80% power-efficiency. In order to realize a 1.0 V output without decreasing power-efficiency, a synchronous-type rectifier scheme with a reverse current protection circuit is adopted and a reference voltage of less than 1.0 V is developed. The external inductor value is reduced by applying the PWM control scheme and a new low-power 1 MHz triangular waveform oscillator. High-value resistors are used in analog circuits including a voltage reference, a triangular waveform oscillator, an error amplifier, and a comparator to have the ultra-low power characteristics. A chip is actually designed and fabricated by using the 2 µm CMOS process. As a result, a 1 MHz, synchronous, step-down from 3.6 V to 1 V, PWM DC-DC converter has been realized with a power efficiency of more than 80% in the output current range from 40 to 70 mA.

It is very difficult to simultaneously achieve power and cost reductions in address-driver circuits of a plasma-display panel (PDP) unit in which an energy-recovery scheme utilizing the resonance of a series-connected inductor and electrode parasitic capacitors is used. This is because an increase in parasitic capacitance and high-speed circuit operation become necessary as the display panel becomes larger in size and higher in resolution. In particular, low-power operation of address-driver ICs is key to avoiding the installation of heat sinks on the ICs. We propose herein new power-dispersion methods that can greatly reduce the power dissipation of address-driver ICs even when large parasitic capacitance is driven at high speed. The proposed methods enable a reduction in the power dissipation of address-driver ICs without deteriorating the operational speed by dispersing their powers into external resistors, and by supplying power to address-driver ICs in two voltage steps during both rising and falling time intervals when the address changes. Our results indicate that the power dissipation of address-driver ICs and the total cost of the address drive unit of a plasma-display panel can be reduced to 29% and 53%, respectively, compared with those of the ICs and the unit that are driven by the conventional address-driving method.

This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional VBE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified VT (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for VBE becomes less than one, and the voltage gain of the amplifier for VT becomes small. This enables the size of bipolar transistors for VT generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.

This paper describes a method of extending the signal frequency bandwidth while increasing the stability of a CMOS transimpedance amplifier (TIA). The TIA consists of three inverting amplifiers in a series, and a high-pass filter plus a non-inverting amplifier that are connected to the last two inverting amplifiers stated above in parallel. The TIA is fabricated using a 0.35 µm CMOS process and realizes stable conversion of 60-dBΩ from the photodiode current to the output voltage with more than 500 MHz of signal frequency bandwidth and 60 mW of power consumption from a 3.3 V supply voltage.

We have designed a new current-mode low-voltage, low-power, high-frequency CMOS VCO circuit. The main purpose of this new circuit is to obtain operational capabilities with more than 1 GHz oscillation frequency from one battery cell. The current-mode approach was adopted throughout the circuit design to achieve this. New differential-type delay cells in the current-mode operation enable extremely low supply voltage operation and superior linearity between the oscillation frequency and control voltage of a ring oscillator. A design which combines the transitions of each delay cell output enables the VCO's high-frequency operation. To obtain a sufficient current level at output, a current amplifier with a small amount of positive feedback is used. The unnecessary generation of spectral components caused by mismatched time delay of delay cells in a ring-oscillator, which is an inherent problem of the VCO in a ring-oscillator form, is 0also analyzed. The characteristics of the designed VCO were examined by the SPICE circuit simulation using standard CMOS 0.6µm devices. Operation with a 1 V power supply, 1 GHz oscillation frequency, and 5.7 mW power dissipation was verified.

This paper describes a study to determine if a current-mode circuit is useful as an analog circuit technique for realizing submicron mixed analog-and-digital MOS LSIs. To examine this, we designed and circuit simulated a new current-mode ADC bit-block for a 3 V, 10-bit level, 20 MHz ADC with a pipeline architecture and with full current-mode approach. A new precision current-mode sample-and-hold circuit which enables operation of a bit block at a clock speed of 20 MHz was developed. Current mismatches caused by the poor output impedance of a device were also decreased by adopting a cascode configuration throughout the design. Operation with a 3 V power supply and a 20 MHz clock speed in a 3-bit A/D configuration was verified through circuit simulation using standard CMOS 0.6 µm device parameters. Gain error, mismatch of current, and linearity of the bit block with changing threshold voltage of a device were carefully examined. The bit block has a gain error of 0.2% (10-bit level), a linearity error of less than 0.1% (more than 10-bit level), and a current mismatch of DAC current sources in a bit cell of 0.2 to 0.4% (more than 8-bit level) with a 3 V power supply and 20 MHz clock speed. An 8-to 9-bit video-speed pipeline ADC can be realized without calibration. This confirms that the current-mode approach is effective.

A 1-V operational sigma-delta modulator with a second-order passive switched capacitor filter is designed and fabricated by using a 90 nm CMOS process. No gate-voltage bootstrapped scheme is adopted to drive analog switches, and the voltage gain of a comparator is chosen to be 94 dB. The experimental results show that the peak SNR reached 68.9 dB with a frequency bandwidth of 40 kHz when the clock was 40 MHz.

This paper describes the design of a 2.7 V operational, 200 MS/s, 14-bit CMOS D/A converter (DAC). The DAC consists of 63 current cells in matrix form for an upper 6-bit sub-DAC, and 8 current cells and R-2R ladder resistors for a lower 8-bit sub-DAC. A source degeneration resistor, for which a transistor in the triode operational region is used, is connected to the source of a MOS current source transistor in a current cell in order to reduce the influence of threshold voltage (Vth) variation and to satisfy the differential nonlinearity error specification as a 14-bit DAC. In conventional high-speed and high-resolution DACs that have the same design specifications described here, spurious-free dynamic range (SFDR) characteristics commonly deteriorate drastically as the frequency of the reconstructed waveform increases. The causes of this deterioration were carefully examined in the present study, finding that the deterioration is caused in part by the input-data-dependent time-constant change at the output terminal. Unexpected current flow in parasitic capacitors associated with current sources causes the change in the output current depending on the input data, resulting in time-constant change. In order to solve this problem, we propose a new output circuit to fix the voltage at the node where the outputs of the current sources are combined. SPICE circuit simulation demonstrates that 63 dB of SFDR characteristics for the 90 MHz reconstructed waveform at the output can be realizable when the supply voltage is 2.7 V, the clock rate is 200 MS/s, and the power dissipation is estimated to be 300 mW.

The high performance and versatile electronic volume IC has been realized by the 15 V high voltage Bi-CMOS process. Mixed use of bipolar and MOS devices has introduced new functions such as buffer amplifiers, a low level oscillator, a temperature compensated D/A converter and a reference voltage generator.

This paper describes an MOS current-mode sample-and-hold (S/H) circuit that potentially operates with a sub-1. 5 V supply voltage, 20 MHz clock frequency, and less than 0. 1% linearity. A newly developed voltage-to-current converter suppresses the voltage change at an input terminal and achieves low-voltage operation with superior linearity. Sample switches are differentially placed at the inputs of a differential amplifier so that the feedthrough errors from switches cancel out. The MOS current-mode S/H circuit is designed and simulated using CMOS 0. 6 µm device parameters. Simulation results indicate that an operation with 20 MHz clock frequency, linearity error of less than 0. 1%, and 1 MHz input from a 1. 5 V power supply is achievable.

By using a quadratic compensation slope, a CMOS current-mode buck DC-DC converter with constant frequency characteristics over wide input and output voltage ranges has been developed. The use of a quadratic slope instead of a conventional linear slope makes both the damping factor in the transfer function and the frequency bandwidth of the current feedback loop independent of the converter's output voltage settings. When the coefficient of the quadratic slope is chosen to be dependent on the input voltage settings, the damping factor in the transfer function and the frequency bandwidth of the current feedback loop both become independent of the input voltage settings. Thus, both the input and output voltage dependences in the current feedback loop are eliminated, the frequency characteristics become constant, and the frequency bandwidth is maximized. To verify the effectiveness of a quadratic compensation slope with a coefficient that is dependent on the input voltage in a buck DC-DC converter, we fabricated a test chip using a 0.18 µm high-voltage CMOS process. The evaluation results show that the frequency characteristics of both the total feedback loop and the current feedback loop are constant even when the input and output voltages are changed from 2.5 V to 7 V and from 0.5 V to 5.6 V, respectively, using a 3 MHz clock.

A high-speed bipolar ECL comparator circuit with a latch is described. The spike noise generated by charging the base-to-emitter diffusion capacitor on the transition of differential transistors' switching in a sample-and-latch circuit is reduced by inserting the emitter degeneration resistors so that neither of them becomes completely cut off. The frequency bandwidth of a pre-amplifier is increased by using coupled inductors as differential loads. As a result, -3 dB frequency bandwidth of a pre-amplifier becomes 10 GHz, and 4 GS/s operation with 6-bit equivalent precision from a 3.3 V power supply is confirmed by the circuit simulation using device parameters from the 25 GHz silicon bipolar process.

A low-voltage operational capability near 1 V along with low noise and distortion characteristics have been realized in a passive sigma-delta modulator. To achieve low-voltage operation, the dc voltage in signal paths in the switched-capacitor-filter section was set to be 0.2 V so that sufficient gate-to-source voltages were obtained for metal-oxide-semiconductor (MOS) switches in signal paths without using a gate-voltage boosting technique. In addition, the input switch that connects the input signal from the outside to the inside of an integrated circuit chip was replaced by a passive resistor to eliminate a floating switch, and gain coefficients in the feedback and input paths were modified so that the bias voltage of the digital-to-analog converter could be set to VDD and 0 V to easily activate MOS switches. As the signal swing becomes small under low-voltage operational circumstances, correlated double sampling was used to suppress the offset voltage and the 1/f noise that appeared at the input of a comparator. The modulator was fabricated using a standard CMOS 0.18-µm process, and the measured results show that the modulator realized 77 dB of dynamic range for 40 kHz of signal bandwidth with a 40 MHz sampling rate while dissipating 2 mW from a 1.1 V supply voltage.

This paper examines the feasibility of a high frequency (moro than 1 GHz) ring-oscillator-type CMOS VCO, able to maintain a good linearity between the oscillator output frequency and control voltage, while preserving low voltage and low power operation capabilities. A CMOS VCO circuit, with a newly developed corrent-controlled delay cell and an architecture combining the transitions of each delay cell output, with high-frequency operation, was designed and simulated using the CMOS 0.6 µm device paramenters. We analyzed the generation of unnecessary harmonics and sub-harmonics when a delay cell's propagation delay time varied. The simulation indicated that a CMOS VCO with a frequency range of 200 MHz to 1.4 GHz, a power dissipation of 8.5 mW at 900 MHz from a 3 V power supply, and an operation voltage of 1 V to 3 V can be implemented on a chip.