High-performance 1.3-µm electroabsorption modulators integrated with DFB lasers are developed for long-reach 100 Gbit Ethernet. The dynamic extinction ratio of over 8-dB with the voltage swing of 2 V are achieved for the four LAN-WDM lanes (14 nm wavelength range) used in 100 Gbit Ethernet with the same modulator structure. The fabricated devices are packaged in butterfly modules and four-lane 40-km single mode fiber transmission at 25-Gbit/s operation is demonstrated. Further, a can-type transmitter optical subassembly is fabricated to reduce the cost and size of transmitter modules. The use of a low-dielectric-constant liquid crystal polymer transmission line makes the 3-dB bandwidth larger and enables 25-Gbit/s operation with CAN-TOSA module.

We proposed a novel structure that improved the linear characteristics of electroabsorption modulator (EAM) with composite quantum-wells as an absorption core layer. We fabricated three types of EAM's whose active cores were 8 nm thick, 12 nm thick and a composite core with 8 nm thick and 12 nm thick quantum-well (QW), respectively. The transfer functions of EAM's were investigated and their third-order inter-modulation distortion (IMD3) was obtained by calculation. The spurious free dynamic range (SFDR) was measured and compared with three types of QW. The linearity of the device with composite quantum-well showed a large enhancement in SFDR by 9.3 dBHz2/3 in TE mode and 7.0 dBHz2/3 in TM mode compared with the conventional EAM.

We demonstrated the transmission over 80 km at 10 Gb/s by using the amplifier and electroabsorption-modulator integrated laser diode. Tilt-facet antireflection window is implemented, inside of which a monitor photodiode is monolithically integrated for accurate power regulation. To better control the amplifier-input power and to reduce the feedback of the amplified spontaneous emission, an attenuator is incorporated by means of the inner-window. By amplifying the modulated signal and compensating modulator-chirp by gain-saturation in the amplifier, high power optical transmission is achieved from a device with -10 dB attenuation at total laser and amplifier currents of 200 mA.

Full-duplex transmission of 60.0 GHz and 59.6 GHz millimeter-wave (mm-wave) signals of 155.52-Mbit/s differential phase shift keying (DPSK) data, radio-on-fiber (ROF) signals over 25-km-long standard single-mode fibers (SMFs) is experimentally demonstrated for the first time using a single 2-RF-port electroabsorption transceiver (EAT). The simplification of base stations (BSs) is strongly required to realize cost-effective and high-reliability mm-wave wireless access. This single EAT detects a C-band ROF signal modulated by a mm-wave downlink signal and simultaneously modulates the L-band optical carrier by a mm-wave uplink signal. The BS mainly consists of the EAT, leading to a simple and low-cost BS. Optical pilot tones and optical bandpass filters are used for photonic downconversion and photonic upconversion, to convert frequencies between mm-wave signals and intermediate frequency (IF) signals in the optical domain. With the use of optical conversions, these signals have no significant fading problems. The simultaneous transmission of both up- and downlinks has been achieved with the BER of less than 10-9. Also the fading problems due to the fiber dispersion of photonic conversions are analyzed mathematically in this paper. The single-EAT BS will become a promising candidate for a ROF access system.

A novel base station for microwave radio-on-fiber systems is proposed. It consists of an L-band electroabsorption modulator and a uni-traveling-carrier photodiode. We show it is applicable for bias-free operation and full-duplex transmission and demonstrate 100-Mbit/s bidirectional data transmission in the 5-GHz band.

The effect of wavelength detuning on the device performance of identical-epitaxial-layer (IEL) electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers is studied in detail. Based on the lasing behavior of integrated devices with different amount of wavelength detuning and the photocurrent spectra under different reverse biases, the optimal wavelength detuning is experimentally determined to be around 30-40 nm for our IEL integrated devices. By adopting gain-coupled DFB laser section, integrated devices with optimal wavelength detuning have demonstrated excellent single mode performances. The extinction ratio is measured to be greater than 15 dB at -3 V, and the modulation bandwidth is around 8 GHz.

The effect of wavelength detuning on the device performance of identical-epitaxial-layer (IEL) electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers is studied in detail. Based on the lasing behavior of integrated devices with different amount of wavelength detuning and the photocurrent spectra under different reverse biases, the optimal wavelength detuning is experimentally determined to be around 30-40 nm for our IEL integrated devices. By adopting gain-coupled DFB laser section, integrated devices with optimal wavelength detuning have demonstrated excellent single mode performances. The extinction ratio is measured to be greater than 15 dB at -3 V, and the modulation bandwidth is around 8 GHz.

We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well (MQW) electroabsorption (EA) modulator operating over a very wide wavelength range in 1.55 µm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased" quantum well (PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces "pre-bias" to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60 nm wavelength range, from 1510 nm to 1570 nm. This MQW-EA modulator plays an important role in wavelength division multiplexing (WDM) transmission and switching systems.

We have proposed and demonstrated a novel optical regenerator architecture employing electroabsorption modulators as wavelength converters. The employment of EA modulators is advantageous for high-speed operation and flexibility in the bit-rate for the pulse regeneration. In addition, the EA modulator-wavelength-converter acts also as a photo diode for clock extraction. Compensation of the optical SNR and Q-factor has been demonstrated, even in cascaded noise load. Furthermore, against dispersion loading, we have confirmed that waveform recovery and Q-factor improvement is obtained by midway insertion of the optical regenerator. The proposed architecture will offer a wide-band-electronics-free optical regenerator in multi-tens of gigabit per second WDM networks.

We have proposed and demonstrated a novel optical regenerator architecture employing electroabsorption modulators as wavelength converters. The employment of EA modulators is advantageous for high-speed operation and flexibility in the bit-rate for the pulse regeneration. In addition, the EA modulator-wavelength-converter acts also as a photo diode for clock extraction. Compensation of the optical SNR and Q-factor has been demonstrated, even in cascaded noise load. Furthermore, against dispersion loading, we have confirmed that waveform recovery and Q-factor improvement is obtained by midway insertion of the optical regenerator. The proposed architecture will offer a wide-band-electronics-free optical regenerator in multi-tens of gigabit per second WDM networks.

Frequency chirping induced in an electorabsorption (EA) modulator can degrade transmission performance because of the chromatic dispersion of fiber. This letter studies the frequency chirping in an EA modulator from the viewpoint of the influence of the modulation bandwidth. Both simulations and experiments, in which fiber transmission was carried out applying modulation signals of different bandwidths to an EA modulator, show that a large bandwidth causes small degradation in the transmission performance. This result is attributed to the short chirping time that occurs when a large bandwidth signal is applied.

Wavelength tunable laser diodes are critical components in a wide variety of WDM and packet switching architectures. And also wavelength-tuned short pulses generated from the semiconductor laser diodes are of great importance for the developments of ultrahigh speed and WDM optical communication systems. Over the past several years, both continuously and discontinuously tunable lasers incorporating periodically sampled and chirped grating have been studied theoretically and experimentally. These laser diodes show the wide tuning range of above 60 nm, stable lasing condition, and large side-mode suppression ratio. Directly modulated semiconductor laser diodes, even those with a single mode, exhibit a dynamic frequency chirp during the on/off modulation. The dynamic linewidth broadening caused by such a large frequency chirp can result in a significant penalty in the performance of high-speed long-haul optical communication systems. The CW laser diodes integrated with an external EA modulator are an breakthrough to realize the high-speed optical systems with low chirp. And also the short pulse generation using the external modulator has been realized experimentally, whose principle of the pulse generation is the optical gating of the electroabsorption modulator. In this paper, widely tunable laser diodes incorporating periodically sampled and chirped gratings and an external modulator are analyzed using an improved time-domain dynamic model. First, it is demonstrated that the improved model is very powerful in simulating the complex laser diodes with active and passive sections. And, the dynamic properties of the sampled grating DBR and chirped grating DBR laser diodes are investigated. Second, the modulation characteristics of the laser diode integrated with the external electroabsorption modulator are studied. It is shown that the external modulation are superior to the direct modulation in the aspect of the lower frequency chirp. And the pulse generation by the optical gating of the external modulator is observed theoretically.

We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.

Wavelength conversion is considered to be one of the key technologies for the future advanced optical networks. So far, intense efforts have been made to realize this functionality by using semiconductor lasers/amplifiers, optical fibers, LiNbO3/semiconductor waveguides. In this paper, we propose a novel wavelength converter using an electroabsorption (EA) modulator. The operating principle is based on the cross-absorption modulation effect of an InGaAsP EA modulator. High quality conversion has been demonstrated at 20 Gbit/s over 30 nm of wavelength range. The applicability to high speed signals (>40 Gbit/s) was also demonstrated. In addition, to study the expected versatility for all optical signal processing applications, broadcasting and extinction-ratio-improvement capability were evaluated.

An electroabsorption (EA) modulator array using a double optical-pass (DP) configuration has been developed to obtain high-speed modulation in parallel. Feeding electrical signals from the highly reflective side of the modulator eliminated component assembly problems with lenses and microwave feeder lines. Passive waveguide integration enabled wafers to be cleaved with very short absorbers. The degradation in frequency response was theoretically calculated to be <0. 2 dB compared to that of EA modulators without a passive waveguide. A common upper doping layer in the absorber and passive waveguide regions was introduced to attain high product throughput due to good epitaxial flatness and processing. The integrated 4-channels multiquantum well DP EA modulator array demonstrated high overall performance for a wavelength range from 1545 to 1558 nm. It features a drive voltage of 2 V for 10 dB attenuation, an insertion loss of 12 dB, and 4 channels17 GHz bandwidths for each channel, with low -20 dB crosstalk between adjacent waveguides.

Electroabsorption modulators are high speed devices that are rapidly being commercialised and finding applications in a number of areas, particularly in telecommunications. A CW laser diode modulated by an electroabsorption modulator constitutes an extremely stable, robust and simple source of high quality, high repetition rate ultrashort optical pulses. In this paper we describe the capabilities and limitations of such pulse sources, and present nonlinear pulse compression and manipulation techniques that allow one to overcome these limitations. We also present the design of a new class of comb-like dispersion-profiled fibre compressor. Such a compressor is easily fabricated from commercially available fibres and represents a simple yet powerful way of extending the range of pulse durations available. As the electroabsorption modulator is essentially a high speed switch it is also applicable to optical processing problems, and we report the application of such a device to demultiplexing.

Polarization insensitive discrete electroabsorption modulators have been designed as an optical gating device. It reveals the first finding, to our knowledge, that the ratio of the optical confinement factor (Γ) to the differential of the values (ΔΓ) between TE and TM polarized lights decides polarization dependence of attenuation. The ratio ΔΓ/Γ is significantly reduced by increasing core thickness. Large optical confinement structures combining a thick InGaAsP bulk absorption layer and polyimide-buried mesa-ridge waveguide have fabricated. The ratio ΔΓ/Γ of the high-mesa structure was estimated to be less than 0.05 in the gain-region of an erbium-doped fiber amplifier (EDFA), which enable us extremely low polarization sensitivity less than 1 dB up to 20 dB extinction. Proper waveguide length of the structure allowed low insertion loss ( 9.3 dB), small loss-change ( 1.8 dB) and sufficient modulation depth ( 30 dB) simultaneously in the EDFA's gain region. The low-mesa structure provided low insertion loss around 7 dB with small deviation in the wavelength region. High modulation band-width and a polarization-insensitive optical gating waveform have also demonstrated.

Photonic ATM switching systems with Terabit/s throughput are desirable for future broadband ISDN systems. Since electronic LSI-based ATM switching systems are planned to have the throughput of 160Gb/s, a photonic ATM switching system should take the role of the highest layer in a hybrid switching network which includes electronic LSI-based ATM switching systems as its sub-system. This report discusses the state-of-the-art photonic devices needed for a frequency-self-routing ATM photonic switching system with maximum throughput of 5Tb/s. This kind of systems seems to be a moderate system for the first phase photonic switching system with no insuperable obstacle for initiating development, even though none of the devices and technologies required have yet been developed to meet the specifications. On the contrary, for realizing further enlarged throughput as the second-phase photonic switching system, there are huge fundamental research projects still remaining for establishing the technology utilizing the spectrum broadened over 120nm and highly-dense FDM technologies based on homodyne coherent detection, if supposing a simple architecture. "Ultra devices" seem to be the photonic devices based on new tailored materials of which gain and refractive index are designed to realize ultra-wide spectrum utilization.