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[Keyword] leakage current reduction(3hit)

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  • Layout Dependent Effect-Aware Leakage Current Reduction and Its Application to Low-Power SAR-ADC

    Gong CHEN  Yu ZHANG  Qing DONG  Ming-Yu LI  Shigetoshi NAKATAKE  

     
    PAPER

      Vol:
    E98-A No:7
      Page(s):
    1442-1454

    As semiconductor manufacturing processing scaling down, leakage current of CMOS circuits is becoming a dominant contributor to power dissipation. This paper provides an efficient leakage current reduction (LCR) technique for low-power and low-frequency circuit designs in terms of design rules and layout parameters related to layout dependent effects. We address the LCR technique both for analog and digital circuits, and present a design case when applying the LCR techniqe to a successive-approximation-register (SAR) analog-to-digital converter (ADC), which typically employs analog and digital transistors. In the post-layout simulation results by HSPICE, an SAR-ADC with the LCR technique achieves 38.6-nW as the total power consumption. Comparing with the design without the LCR technique, we attain about 30% total energy reduction.

  • Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices

    Kai LIAO  XiaoXin CUI  Nan LIAO  KaiSheng MA  

     
    PAPER-Integrated Electronics

      Vol:
    E96-C No:8
      Page(s):
    1068-1075

    With the technology scaling down, leakage power becomes an important part of total power consumption. The relatively large leakage current weakens the energy recovery capability of adiabatic circuits and reduces its superiority, compared with static CMOS circuits in the field of low-power design. In this paper, we rebuild three types of adiabatic circuits (2N2N2P, IPAL and DCPAL) based on FinFET devices to obtain a large leakage power reduction by rationally utilizing the different operating modes of FinFET devices (SG, LP, and IG). A 16-bit adiabatic adder has been investigated to demonstrate the advantages of FinFET adiabatic circuits. The Predictive Technology Model (PTM) is used for 32-nm bulk MOSFET and FinFET devices and all of the simulations are based on HSPICE. The results evince the proposed FinFET adiabatic circuits have a considerable reduction (more than 60% for SG mode FinFET and more than 80% for LP mode FinFET) of power consumption compared with the bulk MOSFET ones. Furthermore, the FinFET adiabatic circuits also have higher limiting frequency of clock source and better noise immunity.

  • A Fast Probability-Based Algorithm for Leakage Current Reduction Considering Controller Cost

    Tsung-Yi WU  Jr-Luen TZENG  

     
    PAPER-Circuit Synthesis

      Vol:
    E90-A No:12
      Page(s):
    2718-2726

    Because the leakage current of a digital circuit depends on the states of the circuit's logic gates, assigning a minimum leakage vector (MLV) for the primary inputs and the flip-flops' outputs of the circuit that operates in the sleep mode is a popular technique for leakage current reduction. In this paper, we propose a novel probability-based algorithm and technique that can rapidly find an MLV. Unlike most traditional techniques that ignore the leakage current overhead of the newborn vector controller, our technique can take this overhead into account. Ignoring this overhead during solution space exploration may bring a side effect that is misrecognizing a non-optimal solution as an optimal one. Experimental results show that our heuristic algorithm can reduce the leakage current up to 59.5% and can find the optimal solutions on most of the small MCNC benchmark circuits. Moreover, the required CPU time of our probability-based program is significantly less than that of a random search program.