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[Keyword] lightwave communications(3hit)

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  • 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs

    Kimikazu SANO  Koichi MURATA  Yasuro YAMANE  

     
    LETTER-Electronic Circuits

      Vol:
    E83-C No:11
      Page(s):
    1788-1790

    A 50-Gbit/s demultiplexer IC module that uses 0.1-µm InAlAs/InGaAs/InP HEMTs is reported. The maximum error-free operation bit-rate of a fabricated module is 50 Gbit/s, and a wide phase margin of 170 degrees is obtained at 43 Gbit/s. 50-Gbit/s demultiplexing is the fastest performance of all packaged demultiplexer ICs yet reported.

  • SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit

    Kimikazu SANO  Koichi MURATA  Hideaki MATSUZAKI  

     
    LETTER-Electronic Circuits

      Vol:
    E83-C No:10
      Page(s):
    1690-1692

    An SCFL-compatible 40-Gbit/s selector circuit using resonant tunneling diodes (RTDs) and high-electron-mobility transistors (HEMTs) is presented. The circuit comprises two monostable-bistable transition elements (MOBILEs) using RTDs, a HEMT NOR circuit, and a HEMT output buffer based on source-coupled-FET logic (SCFL). The circuit is fabricated by monolithically integrating RTDs and 0.1-µm HEMTs on an InP substrate. The fabricated circuit exhibits clear eye-opening at 40 Gbit/s with an output swing of 800 mVp-p, which is close to the conventional high-speed logic IC interface called SCFL.

  • Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode

    Kimikazu SANO  Koichi MURATA  Taiichi OTSUJI  Tomoyuki AKEYOSHI  Naofumi SHIMIZU  Masafumi YAMAMOTO  Tadao ISHIBASHI  Eiichi SANO  

     
    PAPER-Application of Resonant Tunneling Devices

      Vol:
    E82-C No:9
      Page(s):
    1638-1646

    An ultra-fast optoelectronic decision circuit using resonant tunneling diodes (RTD's) and a uni-traveling-carrier photodiode (UTC-PD) is proposed. The circuit employs two cascaded RTD's for ultra-fast logic operation and one UTC-PD that offers a direct optical input interface. This novel configuration is suitable for ultra-fast decision operation. Two types of decision circuits are introduced: a positive-logic type and a negative-logic type. Operations of these circuits were simulated using SPICE with precisely investigated RTD and UTC-PD models. In terms of circuit speed, 40-Gbit/s decision and 80-Gbit/s demultiplexing were expected. Furthermore, the superiority of the negative-logic type in terms of the circuit operating margin and the relationship between input peak photocurrent and effective logic swing were clarified by SPICE simulations. In order to confirm the basic functions of the circuits and the accuracy of the simulations, circuits were fabricated by monolithically integrating InP-based RTD's and UTC-PD's. The circuits successfully exhibited 40-Gbit/s decision operation and 80-Gbit/s demultiplexing operation with less than 10-mW power dissipation. The superiority of the negative-logic type circuit for the circuit operation was confirmed, and the relationship between the input peak photocurrent and the effective logic swing was as predicted.