Ambient light sensors have been used to reduce power consumption of Active Matrix Liquid Crystal Displays (AMLCD) adjusting display brightness depending on ambient illumination. Discrete sensors have been commonly used for this purpose. They make module design complex. Therefore it has been required to integrate the sensors on the display panels for solving the issue. So far, many kinds of integrated sensors have been developed using Amorphous Silicon (a-Si) technology or Low Temperature Polycrystalline Silicon (LTPS) technology. These conventional integrated sensors have two problems. One is that LTPS sensors have less dynamic range due to the less photosensitivity of LTPS photodiodes. The other is that both the LTPS and a-Si sensors are susceptible to display driving noises. In this paper, we introduce a novel integrated sensor using both LTPS and a-Si technologies, which can solve these problems. It consists of vertical a-Si Schottky photodiodes and an LTPS differential converter circuit. The a-Si photodiodes have much higher photosensitivity than LTPS ones, and this contributes to wide dynamic range and high accuracy. The LTPS differential converter circuit converts photocurrent of the photodiodes to a robust digital signal. In addition it has a function of canceling the influences of the display driving noises. With the circuit, the sensor can stably and accurately work even under the noises. The performance of the sensor introduced in this paper was measured to verify the advantages of the novel design. The measurement result showed that it worked in a wide ambient illuminance range of 5-55,000 lux with small errors of below 5%. It was also verified that it stably and accurately worked even under the display driving noise. Thus the sensor introduced in this paper achieved the wide dynamic range and noise robustness.

A clock recovery circuit is a key component in optical communication systems. In this paper, an optoelectronic clock recovery circuit is reported that monolithically integrates a resonant tunneling diode (RTD) and a uni-traveling-carrier photodiode (UTC-PD). The circuit is an injection-locked-type RTD oscillator that uses the photo-current generated by the UTC-PD. Fundamental and sub-harmonic clock extraction is confirmed for the first time with good clock recovery circuit characteristics. The IC extracts an electrical 11.55-GHz clock signal from 11.55-Gbit/s RZ optical data streams with the wide locking range of 450 MHz and low power dissipation of 1.3 mW. Furthermore, the extraction of a sub-harmonic clock from 23.1-Gbit/s and 46.2-Gbit/s input data streams is also confirmed in the wider locking range of 600 MHz. The RMS jitter as determined from a single sideband phase noise measurement is extremely low at less than 200 fs in both cases of clock and sub-harmonic clock extraction. To our knowledge, the product of the output power and operating frequency of the circuit is the highest ever reported for injection-locked-type RTD oscillators. These characteristics indicate the feasibility of the optoelectronic clock recovery circuit for use in future ultra-high-speed fully monolithic receivers.

A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.

This paper describes IC-oriented high-performance AlGaAs/GaAs heterojunction bipolar transistors that were fabricated to demonstrate their great potential in applications to high-speed integrated circuits. A collector structure of ballistic collection transistors with a launcher (LBCTs) shortens the intrinsic delay time of the transistors. A novel and simple self-aligned fabrication process, which features an base-metal-overlaid structure (BMO), reduces emitter- and base-resistances and collector capacitance. The combination of the thin-collector LBCT layer structure and the BMO self-alignment technology raises the average value of cutoff frequency, fT, to 160 GHz with a standard deviation as small as 4.3 GHz. By modifying collector thickness and using Pt/Ti/Pt/Au as the base ohmic contact metal in BMO-LBCTs, the maximum oscillation frequency, fmax, reaches 148 GHz with a 114 GHz fT. A 2:1 multiplexer with retiming D-type flip-flops (DFFs) at input/output stages fabricated on a wafer with the thin-collector LBCT structure operates at 19 Gbit/s. A monolithic preamplifier fabricated on the same wafer has a transimpedance of 52 dBΩ with a 3-dB-down bandwidth of 18.5 GHz and a gain S21 OF 21 dB with a 3-dB-down bandwidth of 19 GHz. Finally, a 40 Gbit/s selector IC and a 50 GHz dynamic frequency divider that were successfully fabricated using the 148-GHz fmax technologies are described.

The authors report ultra-high-speed digital IC modules that use 0.1-µm InAlAs/InGaAs/InP HEMTs for broadband optical fiber communication systems. The multiplexer IC module operated at up to 70 Gbit/s, and error-free operation of the decision IC module was confirmed at 50 Gbit/s. The speed of each module is the fastest yet reported for its kind.

We performed numerical analyses on structure sensitive field emission properties of our proposing plasmon resonant photomixer (PRX) in the terahertz range. The photomixer incorporates doubly interdigitated grating strips for gate electrodes and a vertical resonator structure for realizing highly efficient terahertz emission even at room temperature. We investigated the dependence of total field emission properties of PRX's on their material and dimension parameters. Introduction of low-conductive gate electrodes and ac-coupled 2D periodic plasmon gratings with depleted connecting portions are effective for expanding its lower cutoff frequency. The cutoff frequency, which is around 1.0 THz in standard metal-gates configuration, is expanded to less than 500 GHz. The output intensity could also be amplified more than double. On the other hand, a shorter vertical cavity is effective for expanding its upper cutoff frequency, which is expanded close to vertical resonant frequency, while maintaining the lower cutoff frequency. The combination of these design rules can realize much broader bandwidth operation.

A clock recovery circuit is a key component in optical communication systems. In this paper, an optoelectronic clock recovery circuit is reported that monolithically integrates a resonant tunneling diode (RTD) and a uni-traveling-carrier photodiode (UTC-PD). The circuit is an injection-locked-type RTD oscillator that uses the photo-current generated by the UTC-PD. Fundamental and sub-harmonic clock extraction is confirmed for the first time with good clock recovery circuit characteristics. The IC extracts an electrical 11.55-GHz clock signal from 11.55-Gbit/s RZ optical data streams with the wide locking range of 450 MHz and low power dissipation of 1.3 mW. Furthermore, the extraction of a sub-harmonic clock from 23.1-Gbit/s and 46.2-Gbit/s input data streams is also confirmed in the wider locking range of 600 MHz. The RMS jitter as determined from a single sideband phase noise measurement is extremely low at less than 200 fs in both cases of clock and sub-harmonic clock extraction. To our knowledge, the product of the output power and operating frequency of the circuit is the highest ever reported for injection-locked-type RTD oscillators. These characteristics indicate the feasibility of the optoelectronic clock recovery circuit for use in future ultra-high-speed fully monolithic receivers.

20-Gbit/s multiplexer (MUX) and demultiplexer (DEMUX) ICs are successfully fabricated using production-level high-performance super-self-aligned silicon bipolar transistors (HSSTs) with a unity current gain cutoff frequency of 50 GHz and a maximum oscillation frequency of 65 GHz.

Device figure-of-merits for digital ICs are derived from analytical delay expressions for emitter-coupled logic and source-coupled FET logic inverters and are compared with the operating speeds of D-F/Fs reported in previous studies. We show that device figure-of-merits for baseband amplifiers are equivalent to those for digital ICs. The validity of device figure-of-merits are confirmed by measuring the bandwidth of the baseband amplifiers fabricated with AlGaAs/GaAs LBCTs.

Device models for a laser diode, photodetector, MESFET, HEMT, bipolar transistor, diode, and resistor are proposed and are implemented in a commercial mixed-signal simulator along with models for an optical fiber, an external optical modulator, and a pulse pattern generator. The validity of the models is confirmed by comparing simulated and experimental results. The performance of a mixed photonic/electronic circuit, which is determined by a large-signal waveform and the device noises, is estimated by the present analysis method.

We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.

A high-gain wide-band amplifier IC module is needed for high-speed communication systems. However, it is difficult to expand bandwidth and maintain stability. This is because small parasitic influences, such as bonding-wire inductance or the capacitance of the package, become large at high frequencies, thus degrading performance or causing parasitic oscillation. In this paper, a new design procedure is proposed for the high-gain and wide-band IC module, using stability analysis and a unified design methodology for IC's and packages. A multichip structure is developed using stability analysis and the requirements for stable operation are determined for each IC chip, package, and interface condition between them. Furthermore, to reduce the parasitic influences, several improvements in the interface and package design are clarified, such as wide-band matching and LC resonance damping. IC design using effective feedback techniques for enlarging the bandwidth are also presented. The IC's are fabricated using 0.2-µm GaAs MESFET IC technology. To verify the validity of these techniques, an equalizer IC module for 10-Gb/s optical communication systems was fabricated achieving a gain of 36 dB and a bandwidth of 9 GHz.

We analytically investigated the feasibility of multiplier operation in the terahertz range for our original plasmon resonant photomixer. The photomixer features two unique structures (doubly interdigitated gate gratings and a vertical cavity) for higher radiation efficiencies. Its total field emission properties are the result of a combination of plasmon excitation dynamics and electromagnetic field dynamics. The plasmon excitation formulated by the hydrodynamic equations exhibits fundamental and harmonic resonances whose intensities monotonically decrease with the number of harmonics due to the dispersive plasma damping factors. The electromagnetic dynamics, on the other hand, formulated by the Maxwell's equations, reflect material- and structure-dependent device parameters; the grating-bi-coupled plasmonic cavity together with the vertical cavity structures produce nonlinear field emission properties. This results in extraordinary field enhancement at distinct frequencies inconsistent with the plasmon resonances. The frequency-dependent FDTD (finite difference time domain method) Maxwell's simulation revealed that the field emission peak frequency shifted upward apart from the fundamental mode of plasmon resonant frequency and approached to its second harmonic frequency with increasing the electron density in the plasmon cavity. Calculated total field emission spectra indicated that highly dense 2D-plasmon conditions enable frequency-doubler operation in the terahertz range.

An ultra-fast optoelectronic decision circuit using resonant tunneling diodes (RTD's) and a uni-traveling-carrier photodiode (UTC-PD) is proposed. The circuit employs two cascaded RTD's for ultra-fast logic operation and one UTC-PD that offers a direct optical input interface. This novel configuration is suitable for ultra-fast decision operation. Two types of decision circuits are introduced: a positive-logic type and a negative-logic type. Operations of these circuits were simulated using SPICE with precisely investigated RTD and UTC-PD models. In terms of circuit speed, 40-Gbit/s decision and 80-Gbit/s demultiplexing were expected. Furthermore, the superiority of the negative-logic type in terms of the circuit operating margin and the relationship between input peak photocurrent and effective logic swing were clarified by SPICE simulations. In order to confirm the basic functions of the circuits and the accuracy of the simulations, circuits were fabricated by monolithically integrating InP-based RTD's and UTC-PD's. The circuits successfully exhibited 40-Gbit/s decision operation and 80-Gbit/s demultiplexing operation with less than 10-mW power dissipation. The superiority of the negative-logic type circuit for the circuit operation was confirmed, and the relationship between the input peak photocurrent and the effective logic swing was as predicted.

Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.

For a digitally controlled phase-locked loop (PLL), we evaluate the use of a clock-period comparator (CPC). In this PLL, only the frequency lock operation should be performed; however, the phase lock operation is also simultaneously achieved by performing the clock-period comparison when the phases of the reference signal and the output signal approach each other. Theoretically a lock-up operation was conducted. In addition, we succeeded in digitizing a voltage controlled oscillator (VCO) with a linear characteristic. We confirmed a phase lock operation with a slight loop characteristic through SPICE simulation.

An active integrated antenna (AIA) oscillator consisting of an active circuit and planar antenna on the same substrate can be used as a high-performance, low-cost, small component for millimeter-to-sub-millimeter wave applications. We describe a highly extended, finite-difference-time-domain full-wave analysis method for designing AIA circuits precisely. It treats active devices as distributed elements. Using this method and 0.1-µm-gate InP-based HEMTs, we fabricated W-band AIA oscillators with an oscillation frequency of 111 GHz.

This paper proposes an analytical expression for the maximum operating frequency of an emitter-coupled-logic master-slave toggle flip-flop (ECL MS TFF) based on an impulse response method. The analytical expression was in good agreement with not only SPICE simulations, but also experimental values. The analytical expression also indicated that state-of-the-art InP-based heterojunction bipolar transistors have potential to achieve over 100-GHz operation in ECL MS TFFs. Also, the proposed method was applied to the maximum operating frequency of a source-coupled FET logic (SCFL) MS TFF.