A novel divide-by-3 injection-locked frequency divider (ILFD) is proposed. The ILFD circuit is realized with a cross-coupled n-core MOS LC-tank oscillator embedded with a push-push signal generator and two injection MOSFETs for coupling the injection signal into the resonator. The ILFD uses the linear mixer to extend the locking range and has been implemented in a standard 0.18 µm CMOS process. The core power consumption of the ILFD core is 3.12 mW. The divider's free-running frequency is tunable from 4.26 GHz to 4.9 GHz by tuning the varactor's control bias, and at the incident power of 0 dBm the locking range of the ILFD used as a divide-by-3 divider is 1.5 GHz, from 12.5 GHz to 14.0 GHz.

A 60-GHz injection-locked frequency divider (ILFD) is presented. A multi-order LC oscillator topology is proposed to enhance the locking range of the divider. A design guideline is described based on a theoretical analysis of the locking range enhancement. A test chip is fabricated in 65 nm CMOS. Measured locking range with 0 dBm input power is 48.5–62.9 GHz (25.9%), which is 63.6% wider compared to the previously reported ILFD. Power consumption excluding buffers and biasing circuits is 1.65 mW from 1.2 V supply. The core ILFD area is 0.0157 mm2 even with an extra pair of inductors.

This paper proposes a wide-locking range divide-by-3 injection-locked frequency divider (ILFD) fabricated in the 90 nm 1P9M CMOS technology. The divider consists of an nMOS cross-coupled LC oscillator and two injection MOSFETs in series with the cross-coupled nMOSFETs. The ILFD is formed with two linear mixers which share the same dc current so that a low power ILFD can be designed. At the supply voltage of 0.7 V, the free-running frequency is from 10.18 to 11.56 GHz, the current and power consumption of the divider without buffers are 2.8 mA and 1.96 mW, respectively. At the incident power of 0 dBm, the total operational locking range is 4.94 GHz, from the incident frequency 29.96 to 34.9 GHz.

This paper proposes a wide-locking range divide-by-3 frequency divider employing 3D helical inductors fabricated in the 0.18-µm 1P6M CMOS technology. The divider consists of an nMOS cross-coupled LC oscillator and two injection MOSFETs in series with the cross-coupled NMOSFETs, and the LC resonator is composed of two 3D helical inductors and varactors. The aim of using 3D inductor is to reduce chip size. At the supply voltage of 1.2 V, the divider free-running frequency is tunable from 2.1 GHz to 2.6 GHz, and at the incident power of 0 dBm the locking range is about 2.11 GHz (29.16%), from the incident frequency 5.99 GHz to 8.1 GHz. The core power consumption is 4.56 mW. The die area is 0.6640.831 mm2.

This paper presents a quadrature injection locked frequency divider (ILFD) employing tunable active inductors (TAIs), which are used is to extend the locking range and to reduce die area. The CMOS ILFD is based on a new quadrature voltage-controlled oscillator (VCO) with cross-coupled switching pairs and TAI-C tanks, and was fabricated in the 0.18-µm 1P6M CMOS technology. The divide-by-2 LC-tank ILFD is performed by adding injection MOSFETs between the differential outputs of the VCO. Measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is tunable from 1.34 GHz to 3.07 GHz, and at the incident power of 0 dBm the locking range is about 6 GHz (137%), from the incident frequency 1.37 GHz to 7.38 GHz. The core power consumption is 22.8 mW. The die area is 0.630.55 mm2.

High-speed systems require a wide-frequency-range clock system for data processing. Phase-locked loop (PLL) is used for such a system that requires wide-range variable frequency clock. Frequency calibration method enables the voltage-controlled oscillator (VCO) in a PLL to cover the expected frequency range for high-speed applications that require a wide locking range. Frequency range adjustment is implemented by means of a current digital to analog converter (DAC), which controls the performance curves of a VCO and a bias circuit. This method adjusts the VCO's frequency-voltage performance curves before functional operation so that a PLL can cover requested frequency range with its best condition. Both the limit of control voltage and its target reference voltage are given with same voltage reference. This ensures correct performance after frequency adjustment even under the temperature fluctuation. It eliminates post-production physical adjustment such as fuse trimming which increases the cost and TAT in manufacturing and testing. A high-speed wide-locking range VCO with an automatic frequency performance calibration circuit is implemented within small space in a high-speed hard disk drive channel with 0.25-µm 2.5 V CMOS four-layer metal technology.

This paper presents a 15-GHz MMIC direct optical injection-locked oscillator (MMIC OILO) with very-wide locking range that uses photosensitive HBTs. The MMIC OILO consists of an HBT and a positive feedback circuit including a Q-damping variable resistor. By utilizing the high-fT/fmax photosensitive HBT, we realize both high-frequency oscillation of 15 GHz and increased equivalent electrical injection power. In addition to increasing the RF injection power, the Q-damping variable resistor effectively reduces the quality-factor of the oscillator, thus realizing the very wide locking range (f) of 567 MHz (f/fosc3.8%). The locking bandwidth of 3.8% is over 10 times wider than that of any yet reported microwave direct OILO. Furthermore, it is shown that the MMIC OILO can also work as a high-gain Q-variable filter photoreceiver by increasing a Q-damping variable resistance over the self-oscillation suppression range.