The accuracy of the comparator, which is often determined by its offset, is essential for the resolution of the high performance mixed-signal system. Various design efforts have been made to cancel or calibrate the comparator offset due to many factors like process variations, device thermal noise and input-referred supply noise. However, effective and simple method for offset cancel by applying additional circuits without scarifying the power, speed and area is always challenging. This work explores a dynamic offset control technique that employs charge compensation by timing control. The charge injection and clock feed-through by the latch reset transistor are investigated. A simple method is proposed to generate offset compensation voltage by implementing two source-drain shorted transistors on each regenerative node with timing control signals on their gates. Further analysis for the principle of timing based charge compensation approach for comparator offset control is described. The analysis has been verified by fabricating a 65 nm CMOS 1.2 V 1 GHz comparator that occupies 25 65 µm2 and consumes 380 µW. Circuits for offset control occupies 21% of the areas and 12% of the power consumption of the whole comparator chip.

Charge redistribution based successive approximation (SA) analog-to-digital converter (ADC) has the advantage of power efficiency. Split capacitor digital-to-analog converter (CDAC) technique implements two sets of binary-weighted capacitor arrays connected by a bridge capacitor so as to reduce both input load capacitance and area. However, capacitor mismatches degrade ADC performance in terms of DNL and INL. In this work, a split CDAC mismatch calibration method is proposed. A bridge capacitor larger than conventional design is implemented so that a tunable capacitor can be added in parallel with the lower-weight capacitor array to compensate for mismatches. To guarantee correct CDAC calibration, comparator offset is cancelled using a digital timing control charge compensation technique. To further reduce the input load capacitance, an extra unit capacitor is added to the higher-weight capacitor array. Instead of the lower-weight capacitor array, the extra unit capacitor and the higher-weight capacitor array sample analog input signal. An 8-bit SA ADC with 4-bit + 4-bit split CDAC has been implemented in a 65 nm CMOS process. The ADC has an input capacitance of 180 fF and occupies an active area of 0.03 mm2. Measured results of +0.2/-0.3LSB DNL and +0.3/-0.3LSB INL have been achieved after calibration.

The paper provides an overview of the circuit techniques for CMOS high-speed I/Os, focusing on the design issues in sub-100 nm standard CMOS. First, we describe the evolution of CMOS high-speed I/O since it appeared in mid 90's. In our view, the surge in the I/O bandwidth we experienced from the mid 90's to the present was driven by the continuous improvement of the CMOS IC performance. As a result, CMOS high-speed I/O has covered the data rate ranging from 2.5 Gb/s to 10 Gb/s, and now is heading for 40 Gb/s and beyond. To meet the speed requirements, an optimum choice of the transceiver architecture and its building blocks are crucial. We pick the most critical building blocks such as the decision circuit and the multiplexors and give detailed explanation of their designs. We describe the low-voltage operation of the high-speed I/O in view of reducing the power consumption. An example of a 90-nm CMOS 2.5 Gb/s transceiver operating off a 0.8 V power supply will be described. Operability at 0.8 V ensures that the circuits will not become obsolescent, even below the 60 nm process node.

A 60-GHz injection-locked frequency divider (ILFD) is presented. A multi-order LC oscillator topology is proposed to enhance the locking range of the divider. A design guideline is described based on a theoretical analysis of the locking range enhancement. A test chip is fabricated in 65 nm CMOS. Measured locking range with 0 dBm input power is 48.5–62.9 GHz (25.9%), which is 63.6% wider compared to the previously reported ILFD. Power consumption excluding buffers and biasing circuits is 1.65 mW from 1.2 V supply. The core ILFD area is 0.0157 mm2 even with an extra pair of inductors.

This paper describes an 18-GHz coupled VCO array for low jitter and low phase deviation clock distribution. To reduce the skew, jitter and power consumption associated with clock distribution, the clock is generated by a one-dimensional VCO array in which the oscillating nodes of adjacent VCOs are directly connected with wires. The effects of the wire length and number of unit VCOs in the array are discussed. Both 4-unit and a 2-unit VCO arrays for delivering a clock signal to a 16:1 multiplexor were designed and fabricated in a 90-nm CMOS process. The frequency range of the 4-unit VCO array was 16 GHz to 18.5 GHz while each unit VCO consumed 2 mA.