We have demonstrated low-threshold two-dimensional photonic crystal lasers with self-assembled InAs/GaAs quantum dots. Coupled cavity designs of whispering gallery modes are defined in square lattice photonic crystal slabs. Our lasers showed a small 120 µW input pumping power threshold. Actual absorption power is evaluated to be less than 20 µW. Our lasers show high spontaneous emission coupling (β) factors0.1. The mode volumes are expected to be 0.7-1.2 times cubed wavelength by our modelling. Based on threshold analysis, 80 QDs are the effective number of QDs defined as the number of QDs needed to make PC cavities transparent if they are on maximum optical field points. Using the same analysis we found that single quantum dot lasing is likely to occur both by proper alignment of the single quantum dot relative to geometries of photonic crystals and by using sharp QD emission lines in high-Q localized modes.

An elastic-Vt CMOS circuit is proposed which facilitates both high speed and low power consumption at low supply voltages. This circuit permits fine-grain power control on each multiple circuit block composing a chip, and it is not sensitive to design factors as device-parameter deviations or operating-environment variations. It also does not require any such additional fabrication technology as triple-well structure or multi-threshold voltage. The effectiveness of the circuits design was confirmed in applying it to specially fabricated 16-bit adders and 4-kb SRAMs based on 1. 5-V, 0. 35- µm CMOS technology.

Self-modelocking of Ti:sapphire laser has obtained with less than 2 W of argon-ion laser pumping. Two independent lasers with 36 fsec and 63 fsec in pulse duration were operated by a 6 W pump laser. In the low-threshold lasers, not only an ordinary mode-locking but also a double-pulse mode-locking, where two pulses circulating in the cavity, was stable.