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Eiji HIGURASHI Michitaka YAMAMOTO Takeshi SATO Tadatomo SUGA Renshi SAWADA
Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
Mitsuo ICHIYA Takuro NAKAMURA Shuji NAKATA Jacques LEWINER
Micromachined sensors and actuators applied with electrostatic fields are getting widely developed. At the same time, "electrets," which are dielectrics carrying non-equilibrium permanent space charges or polarization distribution, are in demand because they improve the transducer characteristics. In this paper, we have reported on our successful fabrication of silicon dioxide electrets with extremely superior long-term charge stability by plasma chemical vapor deposition (PCVD). We have also reported on the correlation between the deposition conditions, the long-term charge stability and thermally stimulated current (TSC). Finally, the characterization of the long-term stable electrets will be described and discussed.