We fabricated Fe-silicide nanodots (NDs) on an ultrathin SiO2 layer and evaluated changes in electron transport properties with and without magnetic field application. High-density NDs with an areal density as high as ∼1011cm-2 were formed on thermally grown SiO2 by exposing ultrathin Fe/Si-NDs structures to a remote H2 plasma without external heating. In electron transport properties related to current-time characteristics for a diode with Fe electrode and charging energy to NDs, clear changes in current levels through NDs and electron injection modulation of NDs depending on intensity of magnetic fields were observed.

We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.