We demonstrate a single high-order transverse mode surface emitting laser (VCSEL) with narrow trenches formed on a top surface. The design and the fabrication of a single high-order mode 850 nm GaAs VCSEL with micromachined surface relief are presented. Stable single-mode operation with a side-mode suppression ratio of over 40 dB was obtained in an entire measured current range. We obtained the maximum single mode power of over 3.5 mW and a record low series resistance of below 50 Ω. In addition, a single-lobe far field pattern is demonstrated even under high-order transverse mode operation by loading phase-shift on the top surface. A coupling efficiency with optical fibers is dramatically improved.

The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local-area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultra parallel data transfer in equipment and computer systems. In this paper, we will review its physics and the progress of technology covering the spectral band from infrared to ultraviolet by featuring materials, fabrication technology, and performances such as threshold, output power, polarization, modulation and reliability. Lastly, we will touch on its future prospects.

In this paper, we present some novel concepts and photonic devices for use in optical interconnects. First, we review the progress of surface emitting lasers while featuring materials and performances including thresholds, power output, RIN, linewidth, and so on. Advanced technology for aiming at spontaneous emission control, photon recycling, polarization control, wavelength tuning, integration etc. will be considered. Then we touch on some other possible devices for optical interconnects. Lastly, we discuss on lightwave subsystems applying these devices and concepts.

We have achieved the room temperature cw lasing operation of GaInAsP/InP surface emitting lasers for the first time. By employing a buried heterostructure with 1.3 µm range active region and a MgO/Si heat sink mirror, cw operation was obtained up to 14 with the threshold current of 22 mA.

In this paper we review the recent progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of surface emitting lasers is presented, and then currently developed device technologies will be reviewed. We will feature several technical issues, such as multi-layer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave systems will be discussed.

In this paper we review the recent progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of surface emitting lasers is presented, and then currently developed device technologies will be reviewed. We will feature several technical issues, such as multi-layer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave systems will be discussed.