This paper describes the evaluation of the Voltage Down Converter (VDC) with low ratio of consuming current to load current in DC/AC operation mode. The stability, response and power consumption are investigated. First, for the stability and response, the VDC can operate in the condition that the bounce of the down voltage (dVDL) is no more than 10% of the setting voltage and the maximum load operation frequency (fmax) is 100 MHz at the average load current 70 mA (the maximum load current 140 mA). Secondly, for the power consumption, by using this VDC technology, the value of IC/IL can be suppressed to 5.1E-4 (IC: total consuming current in VDC, IL: average load current) in the condition that dVDL is no more than 10% of the setting voltage and fmax is 10 MHz at the average load current 70 mA. Thus, it is made clear that the VDC can realize high stability, good response and low power consumption at the same time. This technology is suitable for high performance ULSIs which require large load current and low-power consumption.

This paper presents Super-CMOS SRAM process technology that integrates bipolar and CMOS transistors in a chip while adding only one ion implantation step and no lithography mask steps to the conventional CMOS SRAM process. The Super-CMOS SRAM process therefore has the same process cost as the CMOS SRAMs, while it achieves higher access speeds. In order to demonstrate the Super-CMOS SRAM, we have developed a 3.3 V/5 V 256 kb SRAM using 0.4 µm Super-CMOS process technology. By applying bipolar transistors to the sense amplifier circuits, a high-speed access time of 5.8 ns with a 3.0 V power supply is successfully achieved.