We have newly developed a VLSI intelligent cache memory chip which constitutes one processor element of a Parallel Inference Machine (PIM/m) system. This cache memory chip contains 610 k transistors including 80 kbits memory cells. The chip measures 14.47 mm14.84 mm and is fabricated by using 1.0µm CMOS double metal technology. The cache memory chip implements a hardware support called "Trail Buffer" which is suitable for the execution of logic programming languages. We have determined the cache memory size by practical simulation taking the relationship between the chip size and hitratio of the cache memory into consideration. The scan test method and the special commands to access every memory cell are applied to enhance the testability. This chip itself operates at a cycle time of 30 MHz. The typical power consumption is 2.5 W with a 5.5 V power supply at 16.7 MHz operation. With this cache memory chip, the CPU board of the PIM/m is now tuned for 16.7 MHz operation and has attained 1.5 MLIPS (logical inference per second), which is the highest performance as an inference machine in the world.

The features for the integration of 1Tr/1C DRAM and logic for graphic and multimedia applications are surveyed. The key circuit/process technology for large scale embedded DRAM cores is described. The methods to improve transistor performance and gate density are shown. Noise immunity design and easy customization techniques are also introduced.

This paper proposes a new test mode circuit which enables the massively parallel test of DRAMs with a standard LSI tester with little chip area penalty. It is useful to enhance the test throughput that can't be improved by the conventional multi-bit test mode. And a new redundancy circuit that detects and repairs the short circuit failures in the memory cell array is also proposed. It greatly improves the yield of super low power 256 Mbit DRAMs.

This paper describes a new hierarchical bit line organization utilizing a T-shaped bit line(H-BLT) and its practical implementation in a 4-Mb SRAM using a 0.4µm CMOS process. The H-BLT has reduced the number of I/O circuits for multiplexers, sense amplifiers and write drivers, resulting in an efficient multiple blockdivision of the memory cell array. The size of the SRAM die was reduced by 14% without an access penalty. The active current is 30mA at 5 V and 10 MHz. The typical address access time is 35 ns with a 4.5 V supply voltage and a 30 pF load capacitance. The operating voltage range is 2.5 V to 6.0 V. H-BLT is a bright and useful architecture for the high density SRAMs of the future.

Various I/O interface technologies in today's PC platform are classified into four categories, (1) ASIC (memory Controller) from / to Main Memory, (2) MPU from /to ASIC (Memory Controller), (3) ASIC (Memory Controller) from / to ASIC (Graphic Controller) and (4) ASIC from / to Peripherals. As to Category 1, effectiveness of SSTL is shown in DIMM application of SDRAM and DDR SDRAM over 100 MHz frequency. Furthermore a comparison is made between SLDRAM and D- RDRAM from the technology point of view. Concerning Categories 2 through 4, several interfaces such as PCI, AGP, GTL, HSTL and LVDS are reviewed. Interface technologies will keep playing an important role since computer systems require higher and higher speeds.

It is confirmed by simulation that SOI-DRAMs can be operated at high speed by using the floating body structures. Several floating body effects are analyzed. It is described that the dynamic retention characteristics are not dominated by capacitive coupling and hole redistribution. And it is described that those characteristics are determined by the leakage current in the small pn-junction region of the floating body. Reducing pn junction leakage current is important for realizing a long retention time. If the pn junction leakage is suppressed to 10-18 A/µm, a dynamic retention time of 520 sec at a VBSG of 0.5 V can be achieved at 27. On those conditions, the refresh current of SOI-DRAMs is reduced by 54% compared with bulk-Si DRAMs.

This paper describes a bitline control circuit and redundancy technique for high-density dynamic content addressable memories (CAMs). The proposed bitline control circuit can efficiently manage a dynamic CAM cell accompanied by complex operations; that is, a refresh operation, a masked search operation, and partial writing, in addition to normal read/write/search operations. By adding a small supplementary circuit to the bitline control circuit, a circuit scheme with redundancy which prevents disabled column circuits from affecting a match operation can also be obtained. These circuit technologies achieve higher-density dynamic CAMs than conventional static CAMs. These technologies have been successfully applied to a 288-kbit CAM with a typical cycle time of 150 ns.

This paper presents Super-CMOS SRAM process technology that integrates bipolar and CMOS transistors in a chip while adding only one ion implantation step and no lithography mask steps to the conventional CMOS SRAM process. The Super-CMOS SRAM process therefore has the same process cost as the CMOS SRAMs, while it achieves higher access speeds. In order to demonstrate the Super-CMOS SRAM, we have developed a 3.3 V/5 V 256 kb SRAM using 0.4 µm Super-CMOS process technology. By applying bipolar transistors to the sense amplifier circuits, a high-speed access time of 5.8 ns with a 3.0 V power supply is successfully achieved.

This paper reports a 32k32 1-Mbit CMOS synchronous pipelined burst SRMA. A clock access time of 3.6 ns and a minimum cycle time of 9 ns(111 MHz operation) were obtained. An active current of 210 mA at 111 MHz and a standby current of 2 µA were successfully realized. These results can be obtained by a new activation control method in which the internal clock pulses control the decoders, the low resistive bit line and memory cell GND line and the optimization of write recovery timing and data sense timing.