This paper describes two circuit techniques useful for the design of high density and high speed low cost double data rate memories. One is a highly flexible row and column redundancy circuit which allows the division of flexible row redundancy unit into multiple column redundancy unit for higher flexibility, with a new test mode circuit which enables the use of the finer pitch laser fuse. Another is a compact read data path which allows the smooth data flow without wait time in the high frequency operation with less area penalty. These circuit techniques achieved the compact chip size with the cell efficiency of 60.6% and the high bandwidth of 400 MHz operation with CL=2.5.

Various I/O interface technologies in today's PC platform are classified into four categories, (1) ASIC (memory Controller) from / to Main Memory, (2) MPU from /to ASIC (Memory Controller), (3) ASIC (Memory Controller) from / to ASIC (Graphic Controller) and (4) ASIC from / to Peripherals. As to Category 1, effectiveness of SSTL is shown in DIMM application of SDRAM and DDR SDRAM over 100 MHz frequency. Furthermore a comparison is made between SLDRAM and D- RDRAM from the technology point of view. Concerning Categories 2 through 4, several interfaces such as PCI, AGP, GTL, HSTL and LVDS are reviewed. Interface technologies will keep playing an important role since computer systems require higher and higher speeds.

Various kinds of new architectures have been proposed to enhance operating performance of the DRAM. This paper reviews these architectures including EDO, SDRAM, RDRAM, EDRAM, and CDRAM. The EDO slightly modifies the output control of the conventional DRAM architecture. Other innovative architectures try to enhance the performance by taking advantage of DRAM's internal multiple bits architecture with internal pipeline, parallel-serial conversion, or static buffers/on-chip cache. A quantitative analysis based on an assumption of wait cycles was made to compare PC system performance with some architectures. The calculation indicated the effectiveness of external or on-chip cache. Future trends cover high-speed I/O interface, unified memory architecture, and system integrated memory. The interface includes limited I/O swing such as HSTL and SSTL to realize more than 100MHz operation. Also, Ramlink and SyncLink are briefly reviewed as candidates for next generation interface. Unified memory architecture attempts to save total memory capacity by combining graphics and main memory. Advanced device technology enables system integration which combine system logic and memory. It suggests one potential direction towards system on a chip in the future.

A multiple-registered architecture is described for 180 MHz 16 Mbit synchronous DRAM. The proposed architecture realizes a flexible control of critical timings such as I/O line busy time and achieves an operation at 180 MHz clock rate with area penalty of only 5.4% over the conventional DRAM.