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IEICE TRANSACTIONS on Electronics

A 180 MHz Multiple-Registered 16 Mbit SDRAM with Flexible Timing Scheme

Hisashi IWAMOTO, Naoya WATANABE, Akira YAMAZAKI, Seiji SAWADA, Yasumitsu MURAI, Yasuhiro KONISHI, Hiroshi ITOH, Masaki KUMANOYA

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Summary :

A multiple-registered architecture is described for 180 MHz 16 Mbit synchronous DRAM. The proposed architecture realizes a flexible control of critical timings such as I/O line busy time and achieves an operation at 180 MHz clock rate with area penalty of only 5.4% over the conventional DRAM.

Publication
IEICE TRANSACTIONS on Electronics Vol.E77-C No.8 pp.1328-1333
Publication Date
1994/08/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category
DRAM

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