This paper describes a new hierarchical bit line organization utilizing a T-shaped bit line(H-BLT) and its practical implementation in a 4-Mb SRAM using a 0.4µm CMOS process. The H-BLT has reduced the number of I/O circuits for multiplexers, sense amplifiers and write drivers, resulting in an efficient multiple blockdivision of the memory cell array. The size of the SRAM die was reduced by 14% without an access penalty. The active current is 30mA at 5 V and 10 MHz. The typical address access time is 35 ns with a 4.5 V supply voltage and a 30 pF load capacitance. The operating voltage range is 2.5 V to 6.0 V. H-BLT is a bright and useful architecture for the high density SRAMs of the future.

Delay time and power consumption, serious problems in high-density SRAM's are simulated over several generations with the HWD architecture. The optimum grade of hierarchy is obtaind for 64 kbit to 256 Mbit SRAM's.

This letter describes the fan-out optimization method of the SRAM decoder having line capacitance that minimizes the total delay time. It is shown that the total delay time of the SRAM decoder optimized by this mothod is less than that of the equal fan-out condition.