IEICE TRANSACTIONS on Electronics
CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor
Summary :
A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.12 pp.2372-2376
- Publication Date
- 2005/12/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.12.2372
- Type of Manuscript
- PAPER
- Category
- Electronic Circuits
Authors
Keyword
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Kung-Hao LIANG, Chien-Chih HO, Chin-Wei KUO, Yi-Jen CHAN, "CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 12, pp. 2372-2376, December 2005, doi: 10.1093/ietele/e88-c.12.2372.
Abstract: A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.12.2372/_p
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@ARTICLE{e88-c_12_2372,
author={Kung-Hao LIANG, Chien-Chih HO, Chin-Wei KUO, Yi-Jen CHAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor},
year={2005},
volume={E88-C},
number={12},
pages={2372-2376},
abstract={A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.},
keywords={},
doi={10.1093/ietele/e88-c.12.2372},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor
T2 - IEICE TRANSACTIONS on Electronics
SP - 2372
EP - 2376
AU - Kung-Hao LIANG
AU - Chien-Chih HO
AU - Chin-Wei KUO
AU - Yi-Jen CHAN
PY - 2005
DO - 10.1093/ietele/e88-c.12.2372
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2005
AB - A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.
ER -
English
