Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering
Summary :
This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon body. Then, in order to adjust the threshold voltage, it is necessary to adopt gate work function engineering in which a metal or metal silicide gate is used. Using a three-dimensional (3D) device simulator, we analyze the short-channel effects and current characteristics of the SGT. We compare the device characteristics of the SGT to those of the Tri-gate transistor and Double-Gate (DG) MOSFET. When the silicon pillar diameter (or silicon body thickness) is 10 nm, the gate length is 20 nm, and the oxide thickness is 1 nm, the SGT shows a subthreshold swing of 63 mV/dec and a DIBL of -17 mV, whereas the Tri-gate transistor and the DG MOSFET show a subthreshold swing of 71 mV/dec and 77 mV/dec, respectively, and a DIBL of -47 mV and -75 mV, respectively. By adjusting the value of the gate work function, we define the off current at VG = 0 V and VD = 1 V. When the off current is set at 1 pA/µm, the SGT can realize a high on current of 1020 µA/µm at VG = 1 V and VD = 1 V. Moreover, the on current of the SGT is 21% larger than that of the Tri-gate transistor and 52% larger than that of the DG MOSFET. Therefore, the SGT can be scaled reliably toward the decananometer gate length for high-speed and low-power ULSI.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.4 pp.560-567
- Publication Date
- 2006/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.4.560
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Yasue YAMAMOTO, Takeshi HIDAKA, Hiroki NAKAMURA, Hiroshi SAKURABA, Fujio MASUOKA, "Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 4, pp. 560-567, April 2006, doi: 10.1093/ietele/e89-c.4.560.
Abstract: This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon body. Then, in order to adjust the threshold voltage, it is necessary to adopt gate work function engineering in which a metal or metal silicide gate is used. Using a three-dimensional (3D) device simulator, we analyze the short-channel effects and current characteristics of the SGT. We compare the device characteristics of the SGT to those of the Tri-gate transistor and Double-Gate (DG) MOSFET. When the silicon pillar diameter (or silicon body thickness) is 10 nm, the gate length is 20 nm, and the oxide thickness is 1 nm, the SGT shows a subthreshold swing of 63 mV/dec and a DIBL of -17 mV, whereas the Tri-gate transistor and the DG MOSFET show a subthreshold swing of 71 mV/dec and 77 mV/dec, respectively, and a DIBL of -47 mV and -75 mV, respectively. By adjusting the value of the gate work function, we define the off current at VG = 0 V and VD = 1 V. When the off current is set at 1 pA/µm, the SGT can realize a high on current of 1020 µA/µm at VG = 1 V and VD = 1 V. Moreover, the on current of the SGT is 21% larger than that of the Tri-gate transistor and 52% larger than that of the DG MOSFET. Therefore, the SGT can be scaled reliably toward the decananometer gate length for high-speed and low-power ULSI.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.4.560/_p
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@ARTICLE{e89-c_4_560,
author={Yasue YAMAMOTO, Takeshi HIDAKA, Hiroki NAKAMURA, Hiroshi SAKURABA, Fujio MASUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering},
year={2006},
volume={E89-C},
number={4},
pages={560-567},
abstract={This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon body. Then, in order to adjust the threshold voltage, it is necessary to adopt gate work function engineering in which a metal or metal silicide gate is used. Using a three-dimensional (3D) device simulator, we analyze the short-channel effects and current characteristics of the SGT. We compare the device characteristics of the SGT to those of the Tri-gate transistor and Double-Gate (DG) MOSFET. When the silicon pillar diameter (or silicon body thickness) is 10 nm, the gate length is 20 nm, and the oxide thickness is 1 nm, the SGT shows a subthreshold swing of 63 mV/dec and a DIBL of -17 mV, whereas the Tri-gate transistor and the DG MOSFET show a subthreshold swing of 71 mV/dec and 77 mV/dec, respectively, and a DIBL of -47 mV and -75 mV, respectively. By adjusting the value of the gate work function, we define the off current at VG = 0 V and VD = 1 V. When the off current is set at 1 pA/µm, the SGT can realize a high on current of 1020 µA/µm at VG = 1 V and VD = 1 V. Moreover, the on current of the SGT is 21% larger than that of the Tri-gate transistor and 52% larger than that of the DG MOSFET. Therefore, the SGT can be scaled reliably toward the decananometer gate length for high-speed and low-power ULSI.},
keywords={},
doi={10.1093/ietele/e89-c.4.560},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering
T2 - IEICE TRANSACTIONS on Electronics
SP - 560
EP - 567
AU - Yasue YAMAMOTO
AU - Takeshi HIDAKA
AU - Hiroki NAKAMURA
AU - Hiroshi SAKURABA
AU - Fujio MASUOKA
PY - 2006
DO - 10.1093/ietele/e89-c.4.560
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2006
AB - This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon body. Then, in order to adjust the threshold voltage, it is necessary to adopt gate work function engineering in which a metal or metal silicide gate is used. Using a three-dimensional (3D) device simulator, we analyze the short-channel effects and current characteristics of the SGT. We compare the device characteristics of the SGT to those of the Tri-gate transistor and Double-Gate (DG) MOSFET. When the silicon pillar diameter (or silicon body thickness) is 10 nm, the gate length is 20 nm, and the oxide thickness is 1 nm, the SGT shows a subthreshold swing of 63 mV/dec and a DIBL of -17 mV, whereas the Tri-gate transistor and the DG MOSFET show a subthreshold swing of 71 mV/dec and 77 mV/dec, respectively, and a DIBL of -47 mV and -75 mV, respectively. By adjusting the value of the gate work function, we define the off current at VG = 0 V and VD = 1 V. When the off current is set at 1 pA/µm, the SGT can realize a high on current of 1020 µA/µm at VG = 1 V and VD = 1 V. Moreover, the on current of the SGT is 21% larger than that of the Tri-gate transistor and 52% larger than that of the DG MOSFET. Therefore, the SGT can be scaled reliably toward the decananometer gate length for high-speed and low-power ULSI.
ER -
English
