IEICE TRANSACTIONS on Electronics
Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress
Summary :
With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down approach, new III-V heterostructure nanoelectronics will be formed on nanostructure networks formed by combination of top-down and bottom-up approaches. In addition to communication devices, emerging devices include high speed digital LSIs, various sensors, various smart-chips, quantum LSIs and quantum computation devices covering varieties of application areas. Ultra-low power quantum LSIs may become brains of smart chips and other nano-space systems. Achievements of new functions and higher performances and their on chip integration are key issues. Key processing issue remains to be understanding and control of nanostructure surfaces and interfaces in atomic scale.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.874-882
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.874
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
Authors
Keyword
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Hideki HASEGAWA, Seiya KASAI, Taketomo SATO, Tamotsu HASHIZUME, "Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 874-882, July 2006, doi: 10.1093/ietele/e89-c.7.874.
Abstract: With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down approach, new III-V heterostructure nanoelectronics will be formed on nanostructure networks formed by combination of top-down and bottom-up approaches. In addition to communication devices, emerging devices include high speed digital LSIs, various sensors, various smart-chips, quantum LSIs and quantum computation devices covering varieties of application areas. Ultra-low power quantum LSIs may become brains of smart chips and other nano-space systems. Achievements of new functions and higher performances and their on chip integration are key issues. Key processing issue remains to be understanding and control of nanostructure surfaces and interfaces in atomic scale.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.874/_p
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@ARTICLE{e89-c_7_874,
author={Hideki HASEGAWA, Seiya KASAI, Taketomo SATO, Tamotsu HASHIZUME, },
journal={IEICE TRANSACTIONS on Electronics},
title={Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress},
year={2006},
volume={E89-C},
number={7},
pages={874-882},
abstract={With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down approach, new III-V heterostructure nanoelectronics will be formed on nanostructure networks formed by combination of top-down and bottom-up approaches. In addition to communication devices, emerging devices include high speed digital LSIs, various sensors, various smart-chips, quantum LSIs and quantum computation devices covering varieties of application areas. Ultra-low power quantum LSIs may become brains of smart chips and other nano-space systems. Achievements of new functions and higher performances and their on chip integration are key issues. Key processing issue remains to be understanding and control of nanostructure surfaces and interfaces in atomic scale.},
keywords={},
doi={10.1093/ietele/e89-c.7.874},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress
T2 - IEICE TRANSACTIONS on Electronics
SP - 874
EP - 882
AU - Hideki HASEGAWA
AU - Seiya KASAI
AU - Taketomo SATO
AU - Tamotsu HASHIZUME
PY - 2006
DO - 10.1093/ietele/e89-c.7.874
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down approach, new III-V heterostructure nanoelectronics will be formed on nanostructure networks formed by combination of top-down and bottom-up approaches. In addition to communication devices, emerging devices include high speed digital LSIs, various sensors, various smart-chips, quantum LSIs and quantum computation devices covering varieties of application areas. Ultra-low power quantum LSIs may become brains of smart chips and other nano-space systems. Achievements of new functions and higher performances and their on chip integration are key issues. Key processing issue remains to be understanding and control of nanostructure surfaces and interfaces in atomic scale.
ER -
English
