IEICE TRANSACTIONS on Electronics
LSI On-Chip Optical Interconnection with Si Nano-Photonics
Summary :
LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.2 pp.131-137
- Publication Date
- 2008/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.2.131
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
- Category
Authors
Junichi FUJIKATA
Kenichi NISHI
Akiko GOMYO
Jun USHIDA
Tsutomu ISHI
Hiroaki YUKAWA
Daisuke OKAMOTO
Masafumi NAKADA
Takanori SHIMIZU
Masao KINOSHITA
Koichi NOSE
Masayuki MIZUNO
Tai TSUCHIZAWA
Toshifumi WATANABE
Koji YAMADA
Seiichi ITABASHI
Keishi OHASHI
Keyword
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Junichi FUJIKATA, Kenichi NISHI, Akiko GOMYO, Jun USHIDA, Tsutomu ISHI, Hiroaki YUKAWA, Daisuke OKAMOTO, Masafumi NAKADA, Takanori SHIMIZU, Masao KINOSHITA, Koichi NOSE, Masayuki MIZUNO, Tai TSUCHIZAWA, Toshifumi WATANABE, Koji YAMADA, Seiichi ITABASHI, Keishi OHASHI, "LSI On-Chip Optical Interconnection with Si Nano-Photonics" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 2, pp. 131-137, February 2008, doi: 10.1093/ietele/e91-c.2.131.
Abstract: LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.2.131/_p
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@ARTICLE{e91-c_2_131,
author={Junichi FUJIKATA, Kenichi NISHI, Akiko GOMYO, Jun USHIDA, Tsutomu ISHI, Hiroaki YUKAWA, Daisuke OKAMOTO, Masafumi NAKADA, Takanori SHIMIZU, Masao KINOSHITA, Koichi NOSE, Masayuki MIZUNO, Tai TSUCHIZAWA, Toshifumi WATANABE, Koji YAMADA, Seiichi ITABASHI, Keishi OHASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={LSI On-Chip Optical Interconnection with Si Nano-Photonics},
year={2008},
volume={E91-C},
number={2},
pages={131-137},
abstract={LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.},
keywords={},
doi={10.1093/ietele/e91-c.2.131},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - LSI On-Chip Optical Interconnection with Si Nano-Photonics
T2 - IEICE TRANSACTIONS on Electronics
SP - 131
EP - 137
AU - Junichi FUJIKATA
AU - Kenichi NISHI
AU - Akiko GOMYO
AU - Jun USHIDA
AU - Tsutomu ISHI
AU - Hiroaki YUKAWA
AU - Daisuke OKAMOTO
AU - Masafumi NAKADA
AU - Takanori SHIMIZU
AU - Masao KINOSHITA
AU - Koichi NOSE
AU - Masayuki MIZUNO
AU - Tai TSUCHIZAWA
AU - Toshifumi WATANABE
AU - Koji YAMADA
AU - Seiichi ITABASHI
AU - Keishi OHASHI
PY - 2008
DO - 10.1093/ietele/e91-c.2.131
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2008
AB - LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.
ER -
English
