SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen

Sadao NAKASHIMA; Katsutoshi IZUMI

SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen

Sadao NAKASHIMA, Katsutoshi IZUMI

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The threading dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been invenstigated using Secco etching, cross-sectional transmission electron microscopy and Raman spectroscopy. The breakdown voltage of the buried oxide layer has also been studied. The dislocation density is greatly affected by the dose and the wafer temperature during implantation. The SIMOX wafer implanted at 180 keV with a substoichiometric dose of 0.4 10¹⁸ O⁺ cm^-2 at 550 and subsequently annealed at 1350 has an extremely low dislocation density on the order of 10² cm^-2. The effect of the wafer temperature on the reduction of the dislocation density is discussed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.12 pp.1415-1420

Publication Date: 1992/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)

Category: SOI Wafers

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Sadao NAKASHIMA, Katsutoshi IZUMI, "SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 12, pp. 1415-1420, December 1992, doi: .
Abstract: The threading dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been invenstigated using Secco etching, cross-sectional transmission electron microscopy and Raman spectroscopy. The breakdown voltage of the buried oxide layer has also been studied. The dislocation density is greatly affected by the dose and the wafer temperature during implantation. The SIMOX wafer implanted at 180 keV with a substoichiometric dose of 0.4 10¹⁸ O⁺ cm^-2 at 550 and subsequently annealed at 1350 has an extremely low dislocation density on the order of 10² cm^-2. The effect of the wafer temperature on the reduction of the dislocation density is discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_12_1415/_p

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@ARTICLE{e75-c_12_1415,
author={Sadao NAKASHIMA, Katsutoshi IZUMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen},
year={1992},
volume={E75-C},
number={12},
pages={1415-1420},
abstract={The threading dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been invenstigated using Secco etching, cross-sectional transmission electron microscopy and Raman spectroscopy. The breakdown voltage of the buried oxide layer has also been studied. The dislocation density is greatly affected by the dose and the wafer temperature during implantation. The SIMOX wafer implanted at 180 keV with a substoichiometric dose of 0.4 10¹⁸ O⁺ cm^-2 at 550 and subsequently annealed at 1350 has an extremely low dislocation density on the order of 10² cm^-2. The effect of the wafer temperature on the reduction of the dislocation density is discussed.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
T2 - IEICE TRANSACTIONS on Electronics
SP - 1415
EP - 1420
AU - Sadao NAKASHIMA
AU - Katsutoshi IZUMI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1992
AB - The threading dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been invenstigated using Secco etching, cross-sectional transmission electron microscopy and Raman spectroscopy. The breakdown voltage of the buried oxide layer has also been studied. The dislocation density is greatly affected by the dose and the wafer temperature during implantation. The SIMOX wafer implanted at 180 keV with a substoichiometric dose of 0.4 10¹⁸ O⁺ cm^-2 at 550 and subsequently annealed at 1350 has an extremely low dislocation density on the order of 10² cm^-2. The effect of the wafer temperature on the reduction of the dislocation density is discussed.
ER -