This paper describes a dual-mode sensing (DMS) scheme of a capacitor-coupled EEPROM cell. A new memory cell structure and a new sensing scheme are proposed and estimated. The new memory cell combines an EEPROM cell with a DRAM cell. The DMS Scheme utilizes the charge-mode sensing of the DRAM cell in addition to the current-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 µA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance.
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Masanori HAYASHIKOSHI, Hideto HIDAKA, Kazutami ARIMOTO, Kazuyasu FUJISHIMA, "A Dual-Mode Sensing Scheme of Capacitor-Coupled EEPROM Cell" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 4, pp. 467-471, April 1992, doi: .
Abstract: This paper describes a dual-mode sensing (DMS) scheme of a capacitor-coupled EEPROM cell. A new memory cell structure and a new sensing scheme are proposed and estimated. The new memory cell combines an EEPROM cell with a DRAM cell. The DMS Scheme utilizes the charge-mode sensing of the DRAM cell in addition to the current-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 µA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_4_467/_p
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@ARTICLE{e75-c_4_467,
author={Masanori HAYASHIKOSHI, Hideto HIDAKA, Kazutami ARIMOTO, Kazuyasu FUJISHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Dual-Mode Sensing Scheme of Capacitor-Coupled EEPROM Cell},
year={1992},
volume={E75-C},
number={4},
pages={467-471},
abstract={This paper describes a dual-mode sensing (DMS) scheme of a capacitor-coupled EEPROM cell. A new memory cell structure and a new sensing scheme are proposed and estimated. The new memory cell combines an EEPROM cell with a DRAM cell. The DMS Scheme utilizes the charge-mode sensing of the DRAM cell in addition to the current-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 µA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - A Dual-Mode Sensing Scheme of Capacitor-Coupled EEPROM Cell
T2 - IEICE TRANSACTIONS on Electronics
SP - 467
EP - 471
AU - Masanori HAYASHIKOSHI
AU - Hideto HIDAKA
AU - Kazutami ARIMOTO
AU - Kazuyasu FUJISHIMA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1992
AB - This paper describes a dual-mode sensing (DMS) scheme of a capacitor-coupled EEPROM cell. A new memory cell structure and a new sensing scheme are proposed and estimated. The new memory cell combines an EEPROM cell with a DRAM cell. The DMS Scheme utilizes the charge-mode sensing of the DRAM cell in addition to the current-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 µA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance.
ER -