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A Dual-Mode Sensing Scheme of Capacitor-Coupled EEPROM Cell

Masanori HAYASHIKOSHI, Hideto HIDAKA, Kazutami ARIMOTO, Kazuyasu FUJISHIMA

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Summary :

This paper describes a dual-mode sensing (DMS) scheme of a capacitor-coupled EEPROM cell. A new memory cell structure and a new sensing scheme are proposed and estimated. The new memory cell combines an EEPROM cell with a DRAM cell. The DMS Scheme utilizes the charge-mode sensing of the DRAM cell in addition to the current-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 µA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance.

Publication
IEICE TRANSACTIONS on Electronics Vol.E75-C No.4 pp.467-471
Publication Date
1992/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
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