Trends in Capacitor Dielectrics for DRAMs
Summary :
Material research on capacitor dielectrics for DRAM applications is reviewed. The state of the art technologies to prepare Si3N4,Ta2O5, and SrTiO3 thin films for capacitors are described. The down-scaling limits for Si3N4 and Ta2O5 capacitors seem to be 3.5 and 1.5 nm SiO2 equivalent thickness, respectively. Combined with a rugged polysilicon electrode surface,Si3N4 and Ta2O5 based-capacitors are available for 256 Mbit and 1 Gbit DRAMs. At the present time, the minimum SiO2 equivalent thickness for high permittivity materials is around 1 nm with the leakage current density of 10-7 A/cm2. Among the great variety of ferroelectrics, two families of materials,i.e., Pb (Zr, Ti) O3 and (Ba, Sr) TiO3 have emerged as the most promising candidates for 1 Gbit DRAMs and beyond. If the chemical vapor deposition technology can be established for these materials, capacitor dielectrics should not be a limiting issue for Gbit DRAMs.
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- IEICE TRANSACTIONS on Electronics Vol.E76-C No.11 pp.1564-1581
- Publication Date
- 1993/11/25
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- Special Section INVITED PAPER (Special Issue on LSI Memories)
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Akihiko ISHITANI, Pierre-Yves LESAICHERRE, Satoshi KAMIYAMA, Koichi ANDO, Hirohito WATANABE, "Trends in Capacitor Dielectrics for DRAMs" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 11, pp. 1564-1581, November 1993, doi: .
Abstract: Material research on capacitor dielectrics for DRAM applications is reviewed. The state of the art technologies to prepare Si3N4,Ta2O5, and SrTiO3 thin films for capacitors are described. The down-scaling limits for Si3N4 and Ta2O5 capacitors seem to be 3.5 and 1.5 nm SiO2 equivalent thickness, respectively. Combined with a rugged polysilicon electrode surface,Si3N4 and Ta2O5 based-capacitors are available for 256 Mbit and 1 Gbit DRAMs. At the present time, the minimum SiO2 equivalent thickness for high permittivity materials is around 1 nm with the leakage current density of 10-7 A/cm2. Among the great variety of ferroelectrics, two families of materials,i.e., Pb (Zr, Ti) O3 and (Ba, Sr) TiO3 have emerged as the most promising candidates for 1 Gbit DRAMs and beyond. If the chemical vapor deposition technology can be established for these materials, capacitor dielectrics should not be a limiting issue for Gbit DRAMs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_11_1564/_p
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@ARTICLE{e76-c_11_1564,
author={Akihiko ISHITANI, Pierre-Yves LESAICHERRE, Satoshi KAMIYAMA, Koichi ANDO, Hirohito WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Trends in Capacitor Dielectrics for DRAMs},
year={1993},
volume={E76-C},
number={11},
pages={1564-1581},
abstract={Material research on capacitor dielectrics for DRAM applications is reviewed. The state of the art technologies to prepare Si3N4,Ta2O5, and SrTiO3 thin films for capacitors are described. The down-scaling limits for Si3N4 and Ta2O5 capacitors seem to be 3.5 and 1.5 nm SiO2 equivalent thickness, respectively. Combined with a rugged polysilicon electrode surface,Si3N4 and Ta2O5 based-capacitors are available for 256 Mbit and 1 Gbit DRAMs. At the present time, the minimum SiO2 equivalent thickness for high permittivity materials is around 1 nm with the leakage current density of 10-7 A/cm2. Among the great variety of ferroelectrics, two families of materials,i.e., Pb (Zr, Ti) O3 and (Ba, Sr) TiO3 have emerged as the most promising candidates for 1 Gbit DRAMs and beyond. If the chemical vapor deposition technology can be established for these materials, capacitor dielectrics should not be a limiting issue for Gbit DRAMs.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Trends in Capacitor Dielectrics for DRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1564
EP - 1581
AU - Akihiko ISHITANI
AU - Pierre-Yves LESAICHERRE
AU - Satoshi KAMIYAMA
AU - Koichi ANDO
AU - Hirohito WATANABE
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1993
AB - Material research on capacitor dielectrics for DRAM applications is reviewed. The state of the art technologies to prepare Si3N4,Ta2O5, and SrTiO3 thin films for capacitors are described. The down-scaling limits for Si3N4 and Ta2O5 capacitors seem to be 3.5 and 1.5 nm SiO2 equivalent thickness, respectively. Combined with a rugged polysilicon electrode surface,Si3N4 and Ta2O5 based-capacitors are available for 256 Mbit and 1 Gbit DRAMs. At the present time, the minimum SiO2 equivalent thickness for high permittivity materials is around 1 nm with the leakage current density of 10-7 A/cm2. Among the great variety of ferroelectrics, two families of materials,i.e., Pb (Zr, Ti) O3 and (Ba, Sr) TiO3 have emerged as the most promising candidates for 1 Gbit DRAMs and beyond. If the chemical vapor deposition technology can be established for these materials, capacitor dielectrics should not be a limiting issue for Gbit DRAMs.
ER -
English
