A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
Summary :
A precise method for determining AlGaAs/GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated results using these parameters were in good agreement with the fabricated device performance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.159-162
- Publication Date
- 1993/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Electronic Circuits
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Jun-ichi SHIMIZU, Nobuyuki HAYAMA, Kazuhiko HONJO, "A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 1, pp. 159-162, January 1993, doi: .
Abstract: A precise method for determining AlGaAs/GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated results using these parameters were in good agreement with the fabricated device performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_159/_p
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@ARTICLE{e76-c_1_159,
author={Jun-ichi SHIMIZU, Nobuyuki HAYAMA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters},
year={1993},
volume={E76-C},
number={1},
pages={159-162},
abstract={A precise method for determining AlGaAs/GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated results using these parameters were in good agreement with the fabricated device performance.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
T2 - IEICE TRANSACTIONS on Electronics
SP - 159
EP - 162
AU - Jun-ichi SHIMIZU
AU - Nobuyuki HAYAMA
AU - Kazuhiko HONJO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - A precise method for determining AlGaAs/GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated results using these parameters were in good agreement with the fabricated device performance.
ER -
English
