Crosstalk between lines plays an important role in the transmission of signal. Hence it is of great significance to establish the transmission lines model accurately to evaluate factors affecting crosstalk coupling between lines and to improve the anti-interference capability of the system. As twisted-pair line is widely used for its unique twist structure which improves the anti-interference performance of cables, this paper presents a method of constructing transmission lines model of the shielded twisted-pair line (STP) with two twisted pairs based on S-parameters. Firstly, the transmission lines model of STP with one twisted pair is established. The establishment of distributed capacitance matrix of this model depends on the dielectric constant of insulation layer that surrounds a conductor, but the dielectric constant is often unknown. In this respect, a method to obtain the distributed capacitance matrix based on the S-parameters of this model is proposed. Due to twisting, there is a great deal of variability between the distribution parameters along the length of the STP. As the spatial distribution of conductors in the cross-section of twisted-pair line vary along with the cable length, the distribution parameters matrices also change as they move. The cable is divided into several segments, and the transmission lines model of STP is obtained with the cascade of each segment model. For the STP with two twisted pairs, the crosstalk between pairs is analyzed based on the mixed mode S-parameters. Combined with the transmission lines model of STP with one twisted pair, that of STP with two twisted pairs is obtained. The terminal response voltage can be calculated from the transmission lines model and cable terminal conditions. The validity of the transmission lines model is verified by the consistency between the terminal responses calculated by the model and by the simulated. As the theoretical and simulation results are compatible, the modeling method for the STP with two twisted pairs can be used for the STP with more twisted pairs. In practical engineering application, S-parameters and mixed mode S-parameters can be obtained by testing. That means the transmission lines model of STP can be established based on the test results.

In this paper, an analysis method for calculating balanced and unbalanced modes of a small antenna is summarized. Modal condactances which relate dissipated power of the antenna are directly obtained from standard S-parameters that we can measure by a 2-port network analyzer. We demonstrate the validity and effectiveness of the proposed method by simulation and measurement for a dipole antenna with unbalaned feed. The ratio of unbalanced-mode power to the total power (unbalanced-mode power ratio) calculated by the proposed method agrees precisely with that yielded by the conventional method using measured radiation patterns. Furthermore, we analyze a small loop antenna with unbalanced feed by the proposed method and show that the self-balancing characteristic appears when the loop is set in resonant state by loading capacitances or the whole length of the loop is less than 1/20th the wavelength.

This paper analyzes and compares two methods to estimate electromagnetically coupled noises introduced to an antenna due to the nearby circuits at a circuit design stage. One of them is to estimate the power spectrum, and the other one is to estimate the active S11 parameter at the victim antenna, respectively, and both of them use simulated standard S-parameters for the electromagnetic coupling in the circuit. They also need the assumed or measured excitation of noise sources. To confirm the validness of the two methods, an evaluation board consisting of an antenna and noise sources were designed and fabricated in which voltage controlled oscillator (VCO) chips are placed as noise sources. The generated electromagnetic noises are transferred to an antenna via loop-shaped transmission lines, degrading the performance of the antenna. In this paper, detailed analysis procedures are described using the evaluation board, and it is shown that the two methods are equivalent to each other in terms of the induced voltages in the antenna. Finally, a procedure to estimate antenna performance degradation at the design stage is summarized.

This letter describes a method that characterizes and improves the performance of a time-interleaved (TI) digital-to-analog converter (DAC) system by using multiport signal-flow graphs at microwave frequencies. A commercial signal generator with two TI DACs was characterized through s-parameter measurements and was compared to the conventional method. Moreover, prefilters were applied to correct the response, resulting in an error-vector magnitude improvement of greater than 8 dB for a 64-quadrature-amplitude-modulated signal of 4.8 Gbps. As a result, the bandwidth limitation and the complex post processing of the conventional method could be minimized.

In this paper, a measurement method for the impedance and mutual coupling of multi-antennas that we have proposed is summarized. Impedance and mutual coupling characteristics are obtained after reducing the influence of the coaxial cables by synthesizing the measured S-parameters under the condition that unbalanced currents on the outside of the coaxial cables are canceled at feed points. We apply the proposed method to two closely positioned monopole antennas mounted on a small ground plane and demonstrate the validity and effectiveness of the proposed method by simulation and experiment. The proposed method is significantly better in terms of the accuracy of the mutual coupling data. In the presented case, the errors at the resonant frequency of the antennas are only 0.5dB in amplitude and 1.8° in phase.

In this paper, a method of calculating the mean channel capacity based on S-parameter of MIMO (Multiple-Input Multiple-Output) antenna is proposed. This method exploits the correlation matrix calculated from the antenna S-parameter matrix, and offers highly accurate estimates of the mean channel capacity without dependence on SNR (Signal-to-Noise Ratio). The numerical and experimental results revealed that the proposed method can calculate the channel capacity with fair accuracy independent of the number and spacing of the antenna elements if the radiation efficiency is sufficiently high.

With the rapid increase of various uses of wireless communications in modern life, the high microwave and millimeter wave frequency bands are attracting much attention. However, the existing databases on above 6GHz radio-frequency (RF) electromagnetic (EM) field exposure of biological bodies are obviously insufficient. An in-vivo research project on local and whole-body exposure of rats to RF-EM fields above 6GHz was started in Japan in 2013. This study aims to perform a dosimetric design for the whole-body-average specific absorption rates (WBA-SARs) of unconstrained rats exposed to 6GHz RF-EM fields in a reverberation chamber (RC). The required input power into the RC is clarified using a two-step evaluation method in order to achieve a target exposure level in rats. The two-step method, which incorporates the finite-difference time-domain (FDTD) numerical solutions with electric field measurements in an RC exposure system, is used as an evaluation method to determine the whole-body exposure level in the rats. In order to verify the validity of the two-step method, we use S-parameter measurements inside the RC to experimentally derive the WBA-SARs with rat-equivalent phantoms and then compare those with the FDTD-calculated ones. It was shown that the difference between the two-step method and the S-parameter measurements is within 1.63dB, which reveals the validity and usefulness of the two-step technique.

This paper provides a method based on electromagnetic (EM) analysis to predict conducted currents in the bulk current injection (BCI) test system for automotive components. The BCI test system is comprised of an injection probe, equipment under test (EUT), line impedance stabilization networks (LISNs), wires and an electric load. All components are modeled in full-wave EM analysis. The EM model of the injection probe enables us to handle multi wires. By using the transmission line theory, the BCI setup model is divided into several parts in order to reduce the calculation time. The proposed method is applied to an actual BCI setup of an automotive component and the simulated common mode currents at the input terminals of EUT have a good accuracy in the frequency range of 1-400MHz. The model separation reduces the calculation time to only several hours.

This study proposes a novel method for evaluating the transmission characteristics of a three-phase filter using the “Fortescue-mode S-parameters,” which are S-parameters whose variables are transformed into symmetrical coordinates (i.e., zero-/positive-/negative-phase sequences). The behavior of the filter under three-phase current, including its non-symmetry, can be represented by these S-parameters, without regard to frequency. This paper also describes a methodology for creating modal equivalent circuits that reflect Fortescue-mode S-parameters allowing the effects of circuit components on filter characteristics to be estimated. Thus, this method is useful not only for the measurement and evaluation but also for the analysis and design of a three-phase filter. In addition, the physical interpretation of asymmetrical/symmetrical insertion losses and the conversion method based on Fortescue-mode S-parameters are clarified.

This paper focuses on the S-parameter method that is a basic method for measuring the input impedance of balanced-fed antennas. The basic concept of the method is summarized using the two-port network, and it is shown that the method can be enhanced to the unbalanced antennas using a formulation based on incident and reflected waves. The compensation method that eliminates the influence of a measurement jig and the application of the S-parameter method for the measurement of a radiation pattern with reduced unbalanced currents are explained. Further, application of the method for measuring the reflection and coupling coefficients of multiple antennas is introduced. The measured results of the input impedance of a dipole antenna, radiation patterns of a helical antenna on a small housing, and S-parameters of multiple antennas on a small housing are examined, and the measured results obtained with the S-parameter method are verified.

This paper proposes an S-parameter analysis method that uses simultaneous excitation for multi-antenna systems. In this method, OFDM (Orthogonal Frequency Division Multiplexing) and CI (Carrier Interferometry) pulse generation schemes are employed for maintaining the orthogonality among the excited signals. In OFDM excitation schemes, the characteristics of the neighboring antennas can be calculated by assigning different frequency subcarriers exclusively. CI enables the simultaneous verification of the antennas distant enough since this method can provide temporal orthogonality. Combining these two methods yields the simultaneous analyses of array antennas with both narrow and wide element spacing. The simulation of a 22 multi-antenna shows that the results of the proposed method agree well with those of the conventional method even though its computation speed is more 4 times that of the conventional method.

This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.

In 3D computer graphics, mesh parameterization is a key technique for digital geometry processings such as morphing, shape blending, texture mapping, re-meshing and so on. Most of the previous approaches made use of an identical primitive domain to parameterize a mesh model. In recent works of mesh parameterization, more flexible and attractive methods that can create direct mappings between two meshes have been reported. These mappings are called "cross-parameterization" and typically preserve semantic feature correspondences between target meshes. This paper proposes a novel approach for parameterizing a mesh into another one directly. The main idea of our method is to combine a competitive learning and a least-square mesh techniques. It is enough to give some semantic feature correspondences between target meshes, even if they are in different shapes or in different poses.

In this paper, we propose an accurate and scalable S-parameter de-embedding method for RF/microwave on-wafer characterization of silicon MOSFETs. Based on cascade configurations, this method utilizes planar open, short, and thru standards to estimate the effects of surrounding parasitic networks on a MOS transistor. The bulk-shielded open and short standards are used to simulate and de-embed the probe-pad parasitics. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate and drain terminals of the MOSFET. To further eliminate the parasitics of dangling leg in source terminal of the MOSFET, we also introduce the microwave and multi-port network analysis to accomplish the two-port-to-three-port transformation for S-parameters. The MOSFET and its corresponding de-embedding standards were fabricated in a standard CMOS process and characterized up to 40 GHz. The scalability of the open, short, and thru standards is demonstrated and the performance of the proposed de-embedding procedure is validated by comparison with several de-embedding techniques.

In the design of an active integrated antenna, it is necessary to analyze problems such as unwanted emissions or mutual coupling between elements. In this paper, we clarify the problems in implementing S-parameters for an FDTD analysis. Cubic spline interpolation is suitable for the construction of the S-parameter data. The implementation methods of terminal resistors and vias are examined. The proposed FDTD analysis becomes stable after correcting the discrete time lag in the formation of the incident wave. The validity of the proposed method is verified in its application to the low pass filter and the frequency tunable band pass filter.

We propose an accurate and efficient model of having an unbalanced differential line structure, where mode-conversion and frequency dependent loss effects are considered in above the GHz frequency range. To extract model parameters of the proposed unbalanced differential line model, we measured s-parameters of test patterns using a 2-port VNA and defined a new type of mixed-mode s-parameter. The model parameters were obtained and are described for various types of the unbalanced differential line structures. Finally, the validity of the proposed model and the model parameters were successfully confirmed by a series of time-domain measurements and a lattice diagram analysis.

In this study, a cascade open-short-thru (COST) de-embedding procedure is proposed for the first time for on-wafer device characterization in the RF/microwave frequency regime. This technique utilizes the "open" and "short" dummy structures to de-embed the probe-pad parasitics of a device-under-test (DUT). Furthermore, to accurately estimate the input/output interconnect parasitics, including the resistive, inductive, capacitive, and conductive components, the "thru" dummy device has been characterized after probe-pad de-embedding. With the combination of transmission-line theory and cascade-configuration concept, this method can efficiently generate the scalable and repeatable interconnect parameters to completely eliminate the redundant parasitics of the active/passive DUTs of various device sizes and interconnect dimensions. Consequently, this method is very suitable for the on-wafer automatic measurement.

The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.

First we introduce the high-frequency equivalent circuit model of the Fine Pitched Ball Grid Array (FPBGA) bonding for frequencies up to 20 GHz. The lumped circuit model of the FPBGA bonding was extracted based on S-parameters measurement and subsequent fitting of the model parameters. The test packages, which contain probing pads, coplanar waveguides and FPBGA ball bonding, were fabricated and measured. The suggested π-model of the FPBGA bonding consists of self-inductor, self-capacitor, and self-resistor components. From the extracted model, a solder ball of 350 µm diameter and 800 µm ball pitch has less than 0.08 nH self-inductance, 0.40 pF self capacitance, and about 10 mΩ self-resistance. In addition, the mutual capacitance caused by the presence of the adjacent bonding balls is included in the model. The FPBGA solder ball bonding has less than 1.5 dB insertion loss up to 20 GHz, and it causes negligible delay time in digital signal transmission. The extracted circuit model of FPBGA bonding is useful in design and performance simulation of advanced packages, which use FPBGA bonding.

In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.