RFCV Test Structure Design for a Selected Frequency Range
Summary :
The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.817-823
- Publication Date
- 2005/05/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.5.817
- Type of Manuscript
- Special Section PAPER (Special Section on Microelectronic Test Structures)
- Category
Authors
Keyword
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Wutthinan JEAMSAKSIRI, Abdelkarim MERCHA, Javier RAMOS, Stefaan DECOUTERE, Florence CUBAYNES, "RFCV Test Structure Design for a Selected Frequency Range" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 5, pp. 817-823, May 2005, doi: 10.1093/ietele/e88-c.5.817.
Abstract: The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.817/_p
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@ARTICLE{e88-c_5_817,
author={Wutthinan JEAMSAKSIRI, Abdelkarim MERCHA, Javier RAMOS, Stefaan DECOUTERE, Florence CUBAYNES, },
journal={IEICE TRANSACTIONS on Electronics},
title={RFCV Test Structure Design for a Selected Frequency Range},
year={2005},
volume={E88-C},
number={5},
pages={817-823},
abstract={The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.},
keywords={},
doi={10.1093/ietele/e88-c.5.817},
ISSN={},
month={May},}
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TY - JOUR
TI - RFCV Test Structure Design for a Selected Frequency Range
T2 - IEICE TRANSACTIONS on Electronics
SP - 817
EP - 823
AU - Wutthinan JEAMSAKSIRI
AU - Abdelkarim MERCHA
AU - Javier RAMOS
AU - Stefaan DECOUTERE
AU - Florence CUBAYNES
PY - 2005
DO - 10.1093/ietele/e88-c.5.817
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.
ER -
English
