In this research, we investigated the digital/analog-operation utilizing ferroelectric nondoped HfO2 (FeND-HfO2) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN0.5/HfN1.1/HfO2/p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5 nm with the density of interface states (Dit) of 5.3 × 1010 eV-1cm-2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (VFB) was well controlled as 80-100 mV with the input pulses of ±3 V/100 ms controlled by the partial polarization of FeND-HfO2 BL at each 2-bit state operated by the charge injection with the input pulses of +8 V/1-100 ms.

There are several benefits of the information that is invisible to the human eye. “Invisible” here means that it can be visualized or quantified when using instruments. For example, it can improve security without compromising product design. We have succeeded in making an invisible digital image on a metal substrate using periodic repeatability by thin-film interference of niobium oxides. Although this digital information is invisible in the visible light wavelength range of 400-800nm, but detectable in the infrared light that of 800-1150nm. This technology has a potential to be applied to anti-counterfeiting and traceability.

In the field of micro-LED displays consisting of UV or Blue-LED arrays and phosphors, where the chips used are very small, particle size of phosphors must be small to suppress variation in hue for each pixel. Especially, there is a strong demand for a red phosphor with small particle sizes. However, quantum yields of inorganic phosphors decrease as particles size of phosphors get smaller. On the other hand, in the case of organic phosphors and complexes, quantum yields don't decrease when particle size gets smaller because each molecule has a function of absorbing and emitting light. We focus on Eu(III) complexes as candidates of red phosphors for micro-LED displays because their color purities of photoluminescence spectra are high, and have been tried to enhance photoluminescence intensity by coordinating non-ionic ligand, specifically, newly designed phosphine oxide ligands. Non-ionic ligands have generally less influential on properties of complexes compared with ionic ligands, but have a high degree of flexibility in molecular design. We found novel molecular design concept of phosphine oxide ligands to enhance photoluminescence properties of Eu(III) complexes. This time, novel dinuclear Eu(III)-β-diketonates with a branched tetraphosphine tetraoxide ligand, TDPBPO and TDPPPO, were developed. They are designed to have two different phosphine oxide portions; one has aromatic substituents and the other has no aromatic substituent. TDPBPO and TDPPPO ligands have functions of increasing absolute quantum yields of Eu(III)-β-diketonates. Eu(III)-β-diketonates with branched tetraphosphine tetraoxide ligands have sharp red emissions and excellent quantum yields, and are promising candidates for micro LED displays, security media, and sensing for their pure and strong photoluminescence intensity.

We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin (VWM) and read margin (VRM) of the developed (dvlp) SRAM at a supply voltage (VDD) of 1V were 0.470 and 0.1923V, respectively. These values were 1.309 and 2.093 times VWM and VRM of the conventional (conv) SRAM, respectively. At a large threshold voltage (Vt) variability (=+6σ), the minimum power supply voltage (VMin) for the write operation of the conv SRAM was 0.37V, whereas it decreased to 0.22V for the dvlp SRAM. VMin for the read operation of the conv SRAM was 1.05V when the Vt variability (=-6σ) was large, but the dvlp SRAM lowered it to 0.41V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption (PST) while retaining data. The measured PST of the 2k-bit, 90-nm dvlp SRAM was only 0.957µW at VDD=1.0V, which was 9.46% of PST of the conv SRAM (10.12µW). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.

Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.

In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.

This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.

Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.

Improving robustness in electrostatic discharge (ESD) protection by inserting drain-side isolated silicon-controlled rectifiers (SCRs) in a high-voltage (HV) p-channel lateral-diffused MOSFET (pLDMOS) device was investigated in this paper. Additionally, the effects of anti-ESD reliability in the HV pLDMOS transistors provided by this technique were evaluated. From the experimental data, it was determined that the holding voltage (Vh) values of the pLDMOS with an embedded npn-arranged SCR and discrete thin-oxide (OD) layout on the cathode side increased as the parasitic SCR OD row number decreased. Moreover, the trigger voltage (Vt1) and the Vh values of the pLDMOS with a parasitic pnp-arranged SCR and discrete OD layout on the drain side fluctuated slightly as the SCR OD-row number decreased. Furthermore, the secondary breakdown current (It2) values (i.e., the equivalent ESD-reliability robustness) of all pLDMOS-SCR npn-arranged types increased (>408.4%) to a higher degree than those of the pure pLDMOS, except for npn-DIS_3 and npn-DIS_2, which had low areas of SCRs. All pLDMOS-SCR pnp-arranged types exhibited an increase of up to 2.2A-2.4A, except for the pnp_DIS_3 and pnp_DIS_2 samples; the pnp_DIS_91 increased by approximately 2000.9% (249.1%), exhibiting a higher increase than that of the reference pLDMOS (i.e., the corresponding pnp-stripe type). The ESD robustness of the pLDMOS-SCR pnp-arranged type and npn-arranged type with a discrete OD layout on the SCR cathode side was greater than that of the corresponding pLDMOS-SCR stripe type and a pure pLDMOS, particularly in the pLDMOS-SCR pnp-arranged type.

We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.

In order to realize high-yield speckle modulation, we developed a novel spatial light modulator using zinc oxide single crystal doped with nitrogen ions. The distribution of dopants was optimized to induce characteristic optical functions by applying an annealing method developed by us. The device is driven by a current in the in-plane direction, which induces magnetic fields. These fields strongly interact with the doped material, and the spatial distribution of the refractive index is correspondingly modulated via external control. Using this device, we experimentally demonstrated speckle modulation, and we discuss the quantitative superiority of our approach.

Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100--450$^{circ}$C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga$_{2}$O$_{3}$. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface and regeneration of the adsorption sites for TMG. We successfully prepared Ga$_{2}$O$_{3}$ films on Si substrates at RT with a growth per cycle of 0.055,nm/cycle.

Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiO$_{mathrm{x}}$)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H$_{2}$-plasma (H$_{2}$-RP) without external heating, and the resistance-switching behaviors of SiO$_{mathrm{x}}$ were investigated from current-voltage ( extit{I--V}) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local extit{I--V} measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiO$_{mathrm{x}}$ as small as $sim$ 1.9 $ imes$ 10$^{-12}$cm$^{2}$. This local extit{I--V} measurement technique is quite a simple method to evaluate the size scalability of switching properties.

We applied a roll-to-sheet imprinting process to a large-scale substrate. Patterned ruthenium oxide (RuO$_{2}$) electrodes were fabricated on both glass and flexible substrates. The resistivity of the electrodes on a glass substrate was $3.5 imes 10^{-5} Omega $ cm, which indicates that this technique is useful for the fabrication of thin-film transistor (TFT) electrodes.

We have investigated the microwave-detected photoconductivity responses from the amorphous In--Ga--Zn--O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay ($mu$-PCD). It is concluded that the $mu$-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication.

Since electromagnetic (EM) noise resulting from an arc discharge disturbs other electric devices, parameters on electromagnetic compatibility, as well as lifetime and reliability, are important properties for electrical contacts. To clarify the characteristics and the mechanism of the generation of the EM noise, the arc column and voltage fluctuations generated by slowly breaking contacts with external direct current (DC) magnetic field, up to 20,mT, was investigated experimentally using Ag$_{90.7{ m wt%}}$SnO$_{2,9.3{ m wt}%}$ material. Firstly the motion of the arc column is measured by high-speed camera. Secondary, the distribution of the motion of the arc and contact voltage are discussed. It was revealed that the contact voltage fluctuation in the arc duration is related to the arc column motion.

Arc discharge at breaking electrical contact is considered as a main source of not only degradation of the electrical property but also an undesired electromagnetic (EM) noise. In order to clarify the effect of holder temperature on the bridge and arc-duration, opening-waveforms at slowly separating silver-tin dioxide contact with different holder temperature are measured and discussed experimentally in this paper. Firstly, as opening-waveforms, the contact voltage, the contact current and the movement of moving contact related to the gap length are measured simultaneously. Secondly, the relationship between temperature of the holder and duration of the arc was quantified experimentally. It was revealed that as the initial temperature of the holder becomes higher, arc-duration becomes slightly longer. More importantly, the holder temperature dependencies of percentage of each-phase (metallic and gaseous-phases) are different with different closed-current.

We have investigated the impact of O2 annealing after SiOx deposition on the switching behavior to gain a better understanding of the resistance switching mechanism, especially the role of oxygen deficiency in the SiOx network. Although resistive random access memories (ReRAMs) with SiOx after 300 annealing sandwiched with Pt electrodes showed uni-polar type resistance switching characteristics, the switching behaviors were barely detectable for the samples after annealing at temperatures over 500. Taking into account of the average oxygen content in the SiOx films evaluated by XPS measurements, oxygen vacancies in SiOx play an important role in resistance switching. Also, the results of conductive AFM measurements suggest that the formation and disruption of a conducting filament path are mainly responsible for the resistance switching behavior of SiOx.

We investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HF treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.

We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.