This paper is focused on discussing a low-voltage system for lightning, and in particular the testing equipment of surge arresters. Only by demonstrating the performance and applicability of arresters can we seek the most feasible and economic low-voltage solutions. After performing repeated experiments with the same testing samples, using different testing equipment, we compare the different test results in order to select the most suitable and applicable testing equipment. In addition, the basis of a surge current parameter design theory is confirmed and verified through the test results using a simple and compact Impulse Current Generator to test a wide range of samples. By performing the actual analyzes and experiments, we can understand deeply how R, L, and C affect surge current, current wave, and current wave time. The ideal testing equipment standards have been set as follows: (1) Test Voltage up to 20 kV; (2) Expand current range from 1.5 kA to 46.5 kA, with resolution 1.5 kA; and (3) Simple operational procedures.

We investigated oxidation time dependence of graphene oxide employing modified Hummer method by dynamic light scattering. Oxidation reaction proceeded rapidly within about 24 hours, and was saturated. It is suggested that graphene oxides were not able to freely fragment. This implies that the oxidation reactions occur at the limited sites.

Microwave photoconductivity decay (µ-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The µ-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.

In this paper, the design and fabrication of a miniaturized class-F 2.5 GHz 8 W power amplifier using a commercially available GaN HEMT bare chip from TriQuint and a Selectively Anodized Aluminum Oxide (SAAO) substrate are presented. The SAAO process was recently proposed and patented by Wavenics Inc., Daejeon, Korea, which provides the fabrication of small size circuit comparable to conventional MMIC and at drastically low cost due to the use of aluminum as a wafer. The advantage of low cost is especially promising for RF components fabrication in commercial applications like mobile communications. The fabricated power amplifier has a compact size of 4.4 4.4 mm2 and shows power added efficiency (PAE) of about 35% and harmonic suppression of above 30 dBc for second and third harmonics at an output power of 39 dBm.

Arc discharge generated by breaking electrical contact is considered as a main source of not only degradation of the electrical property but also an undesired electromagnetic (EM) noise. In order to clarify the effect of heated temperature on the bridge, arc-duration and the fluctuation of voltage, opening-waveforms at slowly separating silver-tin dioxide contact with holder heating are measured and discussed experimentally in this paper. Firstly, opening-waveforms are measured. Secondly, voltage fluctuation of the each arc-phase is discussed to extract the effect of the heated holder. The relationship between temperature of the heated holder and duration and fluctuation of the arc was investigated experimentally. It was revealed that as the initial temperature of the heated holder becomes higher, arc-duration becomes slightly longer. In addition, voltage fluctuation at the gaseous-phase decreases when the holder is heated. Consequently, the heated holder can suppress the voltage fluctuation even if its duration becomes slightly longer.

We have studied resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes. By sweeping bias to the top Pt electrode, non-polar type resistance switching was observed after a forming process. In comparison to RF sputtered TiOx case, significant small current levels were obtained in both the high resistance state (HRS) and the low resistance state (LRS). And, even with decreasing SiOx thickness down to 8 nm from 40 nm, the ON/OFF ratio in resistance-switching between HRS and LRS as large as 103 was maintained. From the analysis of current-voltage characteristics for Pt/SiOx on p-type Si(100) and n-type Si(100), it is suggested that the red-ox (REDction and OXidation) reaction induced by electron fluence near the Pt/SiOx interface is of importance for obtaining the resistance-switching behavior.

Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600 from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4:Eu2 + phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.

We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.

We investigated the photovoltaic properties of multilayered devices consisting of ITO/oxide/Tetraphenyl porphyrin (H2TPP)/Fullerene (C60)/Bathocuproine (BCP)/Al structures. The VOC markedly increases with the insertion of NiO and MoO3 hole collection layers. However, the "kink" behaviors and temperature dependent properties are observed for the devices with and without MoO3 especially for the thick H2TPP film. We demonstrated the analysis of the photovoltaic properties using the Poole-Frenkel and Schottky models based on the dielectric behaviors of porphyrin and MoO3 layers.

Ba0.5Sr0.5Ta2O6 (BSTA) thin film was successfully fabricated on a Pt/SiO2/TiO2/Si substrate using the Sol-Gel method. Fundamental electrical properties of the BSTA thin film were investigated using metal-insulator-metal (MIM) structure. No diffusion of ions, from the thin film or the substrate, is observed because of the using of MIM structure. The Root Mean Square roughness of 1.04 nm shows that thin film grew well on the substrate. The BSTA thin film shows a much higher dielectric constant of about 130 than conventional gate insulators and high-k materials that are currently used in Thin Film Transistors. Low leakage current density of about 10-8 A/cm2 was obtained at an applied electric field of 500 kV/cm. Schottky emission is the dominant conduction mechanism at applied electric fields lower than 500 kV/cm and Fowler-Nordheim tunneling is the dominant conduction mechanism at higher applied electric fields. The Schottky barrier height between the Pt electrode and the Ba0.5Sr0.5Ta2O6 thin film was estimated to be 0.75 eV.

Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.

In this paper, a fully integrated 5 GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18 µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1 GHz to 6.1 GHz (relative value of 17.9%) and phase noise of lower than -110.8 dBc/Hz at 1 MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182 dBc/Hz.

A new mixed-voltage I/O buffer for low-voltage low-latency operation is proposed in this paper. The proposed buffer adopts a novel delay-based timing-control scheme to efficiently avoid problems like gate-oxide stress and hot-carrier degradation. The proposed timing-control scheme also allows the buffer to have a lower latency for transmitting data by avoiding the use of timing-critical circuits like series-connected transmission gates (TGs) and triple-stacked transistors. The latency for receiving data at low supply voltage is also reduced by employing a variable stacked transistor gate-biasing scheme. Comparison results in an 80-nm CMOS process indicated that the proposed mixed-voltage I/O buffer improved up to 79.3% for receiving the external data and up to 23.8% for transmitting the internal data at a supply voltage of 1.2 V.

The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.

Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-21020 cm-3 without decrease in the Hall mobility.

Indium-sulfide-oxide thin films have been successfully deposited on indium-tin-oxide-coated glass from an aqueous solution containing Na2S2O3 and In2(SO4)3 by electrochemical deposition using a periodic 2-step-pulse voltage. The films have been annealed in nitrogen atmosphere for an hour at different temperatures; namely, 100, 200, 300 and 400. Then, the as-deposited and annealed films were characterized structurally, morphologically and optically. X-ray photoelectron spectroscopy (XPS) study was performed in order to understand the chemical states of the oxygen involved in the film composition. The photosensitivity was observed by means of photoelectrochemical measurements, which confirmed that the as-deposited and annealed films showed n-type conduction. Moreover, a heterostructure solar cell that has indium sulfide as a buffer layer and tin sulfide as an absorber was fabricated and characterized.

A variety of ZnO belt-like structures were synthesized by the heat treatment of ZnS substrates with Ga droplets in the air, and their morphological and structural properties were investigated. Three types of ZnO belts with flat surfaces of (20), (100) and (23) were obtained. As comparison, the ZnO crystal growth was examined by the thermal oxidation of ZnS only. These results highlight the promise of the heat treatment with Ga in the synthesis of oxide nanostructures.

MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.

We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.

A precision in thickness recycling modus for a displays' color filter surface using a gear-form cathode in microelectrochemical removal is developed in the study. Through the precise removal processes of optical materials of nanostructure of Indium-Tin-Oxide crystallization, the optoelectronic semiconductor industry can effectively recycle defective products, and reducing production costs.