Removal of Particles on Si Wafers in SC-1 Solution
Summary :
We have investigated the relationship between particle removal efficiency and etched depth in SC-1 solution (the mixture composed of ammonium hydroxide, hydrogen peroxide and DI water) for Si wafers. The Si etching rate increases with increasing NH4OH (ammonium hydroxide) concentration. The particle removal efficiency depends on the etched Si depth, and is independent of NH4OH concentration. The minimum required Si etching depth to get over 95% particle removal efficiency is 4 nm. Particles on the Si wafers exponentially decrease with increasing the etched Si depth. However the particle removal efficiency is not affected by particle size ranging from 0.2 to 0.5 µm. The particle removal mechanism on the Si wafers in SC-1 solution is dominated by the lift-off of particles due to Si undercutting and redeposition of the removed particle.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.492-497
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Process Technology
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Hiroyuki KAWAHARA, Kenji YONEDA, Izumi MUROZONO, Yoshihiro TODOKORO, "Removal of Particles on Si Wafers in SC-1 Solution" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 492-497, March 1994, doi: .
Abstract: We have investigated the relationship between particle removal efficiency and etched depth in SC-1 solution (the mixture composed of ammonium hydroxide, hydrogen peroxide and DI water) for Si wafers. The Si etching rate increases with increasing NH4OH (ammonium hydroxide) concentration. The particle removal efficiency depends on the etched Si depth, and is independent of NH4OH concentration. The minimum required Si etching depth to get over 95% particle removal efficiency is 4 nm. Particles on the Si wafers exponentially decrease with increasing the etched Si depth. However the particle removal efficiency is not affected by particle size ranging from 0.2 to 0.5 µm. The particle removal mechanism on the Si wafers in SC-1 solution is dominated by the lift-off of particles due to Si undercutting and redeposition of the removed particle.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_492/_p
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@ARTICLE{e77-c_3_492,
author={Hiroyuki KAWAHARA, Kenji YONEDA, Izumi MUROZONO, Yoshihiro TODOKORO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Removal of Particles on Si Wafers in SC-1 Solution},
year={1994},
volume={E77-C},
number={3},
pages={492-497},
abstract={We have investigated the relationship between particle removal efficiency and etched depth in SC-1 solution (the mixture composed of ammonium hydroxide, hydrogen peroxide and DI water) for Si wafers. The Si etching rate increases with increasing NH4OH (ammonium hydroxide) concentration. The particle removal efficiency depends on the etched Si depth, and is independent of NH4OH concentration. The minimum required Si etching depth to get over 95% particle removal efficiency is 4 nm. Particles on the Si wafers exponentially decrease with increasing the etched Si depth. However the particle removal efficiency is not affected by particle size ranging from 0.2 to 0.5 µm. The particle removal mechanism on the Si wafers in SC-1 solution is dominated by the lift-off of particles due to Si undercutting and redeposition of the removed particle.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Removal of Particles on Si Wafers in SC-1 Solution
T2 - IEICE TRANSACTIONS on Electronics
SP - 492
EP - 497
AU - Hiroyuki KAWAHARA
AU - Kenji YONEDA
AU - Izumi MUROZONO
AU - Yoshihiro TODOKORO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - We have investigated the relationship between particle removal efficiency and etched depth in SC-1 solution (the mixture composed of ammonium hydroxide, hydrogen peroxide and DI water) for Si wafers. The Si etching rate increases with increasing NH4OH (ammonium hydroxide) concentration. The particle removal efficiency depends on the etched Si depth, and is independent of NH4OH concentration. The minimum required Si etching depth to get over 95% particle removal efficiency is 4 nm. Particles on the Si wafers exponentially decrease with increasing the etched Si depth. However the particle removal efficiency is not affected by particle size ranging from 0.2 to 0.5 µm. The particle removal mechanism on the Si wafers in SC-1 solution is dominated by the lift-off of particles due to Si undercutting and redeposition of the removed particle.
ER -
English
