A procedure for preparing a cross-sectional transmission electron microscopy (TEM) micrograph of a specific area is outlined. A specific area in a specimen has been very difficult to observe with TEM, because a particular small area cannot be preselected in the conventional specimen preparation technique using mechanical polishing, dimpling and ion milling. The technique in this paper uses a focused ion beam (FIB) to fabricate a cross-sectional specimen at a desired area. The applications of this specimen preparation technique are illustrated for investigations of particles in the process of fabricating devices and degraded aluminum/aluminum vias. The specimen preparation technique using FIB is useful for observing a specific area. This technique is also useful for shortening the time of specimen preparation and observing wide areas of LSI devices.
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Yoshifumi HATA, Ryuji ETOH, Hiroshi YAMASHITA, Shinji FUJII, Yoshikazu HARADA, "Microstructure Analysis Technique of Specific Area by Transmission Electron Microscopy" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 4, pp. 590-594, April 1994, doi: .
Abstract: A procedure for preparing a cross-sectional transmission electron microscopy (TEM) micrograph of a specific area is outlined. A specific area in a specimen has been very difficult to observe with TEM, because a particular small area cannot be preselected in the conventional specimen preparation technique using mechanical polishing, dimpling and ion milling. The technique in this paper uses a focused ion beam (FIB) to fabricate a cross-sectional specimen at a desired area. The applications of this specimen preparation technique are illustrated for investigations of particles in the process of fabricating devices and degraded aluminum/aluminum vias. The specimen preparation technique using FIB is useful for observing a specific area. This technique is also useful for shortening the time of specimen preparation and observing wide areas of LSI devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_4_590/_p
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@ARTICLE{e77-c_4_590,
author={Yoshifumi HATA, Ryuji ETOH, Hiroshi YAMASHITA, Shinji FUJII, Yoshikazu HARADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microstructure Analysis Technique of Specific Area by Transmission Electron Microscopy},
year={1994},
volume={E77-C},
number={4},
pages={590-594},
abstract={A procedure for preparing a cross-sectional transmission electron microscopy (TEM) micrograph of a specific area is outlined. A specific area in a specimen has been very difficult to observe with TEM, because a particular small area cannot be preselected in the conventional specimen preparation technique using mechanical polishing, dimpling and ion milling. The technique in this paper uses a focused ion beam (FIB) to fabricate a cross-sectional specimen at a desired area. The applications of this specimen preparation technique are illustrated for investigations of particles in the process of fabricating devices and degraded aluminum/aluminum vias. The specimen preparation technique using FIB is useful for observing a specific area. This technique is also useful for shortening the time of specimen preparation and observing wide areas of LSI devices.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Microstructure Analysis Technique of Specific Area by Transmission Electron Microscopy
T2 - IEICE TRANSACTIONS on Electronics
SP - 590
EP - 594
AU - Yoshifumi HATA
AU - Ryuji ETOH
AU - Hiroshi YAMASHITA
AU - Shinji FUJII
AU - Yoshikazu HARADA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1994
AB - A procedure for preparing a cross-sectional transmission electron microscopy (TEM) micrograph of a specific area is outlined. A specific area in a specimen has been very difficult to observe with TEM, because a particular small area cannot be preselected in the conventional specimen preparation technique using mechanical polishing, dimpling and ion milling. The technique in this paper uses a focused ion beam (FIB) to fabricate a cross-sectional specimen at a desired area. The applications of this specimen preparation technique are illustrated for investigations of particles in the process of fabricating devices and degraded aluminum/aluminum vias. The specimen preparation technique using FIB is useful for observing a specific area. This technique is also useful for shortening the time of specimen preparation and observing wide areas of LSI devices.
ER -