Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors
Summary :
A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to half; with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.165-171
- Publication Date
- 1996/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microelectronic Test Structures)
- Category
- Device and Circuit Characterization
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Masamichi TANABE, Hiromi SHIMAMOTO, Takahiro ONAI, Katsuyoshi WASHIO, "Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 2, pp. 165-171, February 1996, doi: .
Abstract: A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to half; with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_2_165/_p
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@ARTICLE{e79-c_2_165,
author={Masamichi TANABE, Hiromi SHIMAMOTO, Takahiro ONAI, Katsuyoshi WASHIO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors},
year={1996},
volume={E79-C},
number={2},
pages={165-171},
abstract={A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to half; with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 165
EP - 171
AU - Masamichi TANABE
AU - Hiromi SHIMAMOTO
AU - Takahiro ONAI
AU - Katsuyoshi WASHIO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to half; with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.
ER -
English
