Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing

Mototaka KAMOSHIDA; Hirotomo INUI; Toshiyuki OHTA; Kunihiko KASAMA

Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing

Mototaka KAMOSHIDA, Hirotomo INUI, Toshiyuki OHTA, Kunihiko KASAMA

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The scaling laws between the design rules and the smallest sizes and numbers of particles capable of causing pattern defects and scrapping dies in semiconductor device manufacturing are described. Simulation with electromagnetic waveguide model indicates the possibility that particles, the sizes of which are of comparable order or even smaller than the wavelength of the lithography irradiation sources, are capable of causing pattern defects. For example, in the future 0.25 µm-design-rule era, the critical sizes of Si, Al, and SiO₂ particles are simulated as 120 nm 120 nm, 120 nm 120 nm, and 560 nm 560 nm, respectively, in the case of 0.7 µm-thick chemically-amplified positive photoresist with 47 nm-thick top anti-reflective coating films. Future giga-scale integration era is also predicted.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.3 pp.264-271

Publication Date: 1996/03/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Scientific ULSI Manufacturing Technology)

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Mototaka KAMOSHIDA, Hirotomo INUI, Toshiyuki OHTA, Kunihiko KASAMA, "Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 3, pp. 264-271, March 1996, doi: .
Abstract: The scaling laws between the design rules and the smallest sizes and numbers of particles capable of causing pattern defects and scrapping dies in semiconductor device manufacturing are described. Simulation with electromagnetic waveguide model indicates the possibility that particles, the sizes of which are of comparable order or even smaller than the wavelength of the lithography irradiation sources, are capable of causing pattern defects. For example, in the future 0.25 µm-design-rule era, the critical sizes of Si, Al, and SiO₂ particles are simulated as 120 nm 120 nm, 120 nm 120 nm, and 560 nm 560 nm, respectively, in the case of 0.7 µm-thick chemically-amplified positive photoresist with 47 nm-thick top anti-reflective coating films. Future giga-scale integration era is also predicted.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_3_264/_p

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@ARTICLE{e79-c_3_264,
author={Mototaka KAMOSHIDA, Hirotomo INUI, Toshiyuki OHTA, Kunihiko KASAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing},
year={1996},
volume={E79-C},
number={3},
pages={264-271},
abstract={The scaling laws between the design rules and the smallest sizes and numbers of particles capable of causing pattern defects and scrapping dies in semiconductor device manufacturing are described. Simulation with electromagnetic waveguide model indicates the possibility that particles, the sizes of which are of comparable order or even smaller than the wavelength of the lithography irradiation sources, are capable of causing pattern defects. For example, in the future 0.25 µm-design-rule era, the critical sizes of Si, Al, and SiO₂ particles are simulated as 120 nm 120 nm, 120 nm 120 nm, and 560 nm 560 nm, respectively, in the case of 0.7 µm-thick chemically-amplified positive photoresist with 47 nm-thick top anti-reflective coating films. Future giga-scale integration era is also predicted.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Sizes and Numbers of Particles Being Capable of Causing Pattern Defects in Semiconductor Device Manufacturing
T2 - IEICE TRANSACTIONS on Electronics
SP - 264
EP - 271
AU - Mototaka KAMOSHIDA
AU - Hirotomo INUI
AU - Toshiyuki OHTA
AU - Kunihiko KASAMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1996
AB - The scaling laws between the design rules and the smallest sizes and numbers of particles capable of causing pattern defects and scrapping dies in semiconductor device manufacturing are described. Simulation with electromagnetic waveguide model indicates the possibility that particles, the sizes of which are of comparable order or even smaller than the wavelength of the lithography irradiation sources, are capable of causing pattern defects. For example, in the future 0.25 µm-design-rule era, the critical sizes of Si, Al, and SiO₂ particles are simulated as 120 nm 120 nm, 120 nm 120 nm, and 560 nm 560 nm, respectively, in the case of 0.7 µm-thick chemically-amplified positive photoresist with 47 nm-thick top anti-reflective coating films. Future giga-scale integration era is also predicted.
ER -