Particle Growth Caused by Film Deposition in VLSI Manufacturing Process

Yoshimasa TAKII; Yuichi MIYOSHI; Yuichi HIROFUJI

Particle Growth Caused by Film Deposition in VLSI Manufacturing Process

Yoshimasa TAKII, Yuichi MIYOSHI, Yuichi HIROFUJI

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In order to simulate the mechanism of particle growth by film deposition, imaginary-particle formation method has been newly developed. By using this formation method, the particle size, the particle height and the position of particle on a wafer could be controlled very easily. In this study, the imaginary-particles of various size larger than 0.15 micron and various height were formed on a wafer. By using these imaginary-particles, the effects of a deposition method, a film thickness, a particle size and a particle height upon the particle growth were investigated. As deposition methods, low pressure CVD method, plasma CVD method and sputtering method were compared. As a result, in all deposition method, it's clear that the particle growth doesn't depend on the initial size, and is proportional to the film thickness. Their particle growth rates are characterized by the deposition method, and their values are 1.9, 1.1 and 0.64 in low pressure CVD, plasma CVD and sputtering method, respectively. These values can be explained by the step coverage decided by the deposition method. Furthermore, the particle growth on imaginary-particle was compared with that on the real-particle. It is clear that the growth mechanism of the real-particle is closely similar to that of imaginary-particle, and the study by use of the imaginary-particle is very effective to make clear the mechanism of particle growth. Therefore, the particle size which should be controlled before deposition process is necessary to be decided by counting the particle growth shown in this paper.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.3 pp.312-316

Publication Date: 1996/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)

Category: Particle/Defect Control and Analysis

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Yoshimasa TAKII, Yuichi MIYOSHI, Yuichi HIROFUJI, "Particle Growth Caused by Film Deposition in VLSI Manufacturing Process" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 3, pp. 312-316, March 1996, doi: .
Abstract: In order to simulate the mechanism of particle growth by film deposition, imaginary-particle formation method has been newly developed. By using this formation method, the particle size, the particle height and the position of particle on a wafer could be controlled very easily. In this study, the imaginary-particles of various size larger than 0.15 micron and various height were formed on a wafer. By using these imaginary-particles, the effects of a deposition method, a film thickness, a particle size and a particle height upon the particle growth were investigated. As deposition methods, low pressure CVD method, plasma CVD method and sputtering method were compared. As a result, in all deposition method, it's clear that the particle growth doesn't depend on the initial size, and is proportional to the film thickness. Their particle growth rates are characterized by the deposition method, and their values are 1.9, 1.1 and 0.64 in low pressure CVD, plasma CVD and sputtering method, respectively. These values can be explained by the step coverage decided by the deposition method. Furthermore, the particle growth on imaginary-particle was compared with that on the real-particle. It is clear that the growth mechanism of the real-particle is closely similar to that of imaginary-particle, and the study by use of the imaginary-particle is very effective to make clear the mechanism of particle growth. Therefore, the particle size which should be controlled before deposition process is necessary to be decided by counting the particle growth shown in this paper.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_3_312/_p

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@ARTICLE{e79-c_3_312,
author={Yoshimasa TAKII, Yuichi MIYOSHI, Yuichi HIROFUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Particle Growth Caused by Film Deposition in VLSI Manufacturing Process},
year={1996},
volume={E79-C},
number={3},
pages={312-316},
abstract={In order to simulate the mechanism of particle growth by film deposition, imaginary-particle formation method has been newly developed. By using this formation method, the particle size, the particle height and the position of particle on a wafer could be controlled very easily. In this study, the imaginary-particles of various size larger than 0.15 micron and various height were formed on a wafer. By using these imaginary-particles, the effects of a deposition method, a film thickness, a particle size and a particle height upon the particle growth were investigated. As deposition methods, low pressure CVD method, plasma CVD method and sputtering method were compared. As a result, in all deposition method, it's clear that the particle growth doesn't depend on the initial size, and is proportional to the film thickness. Their particle growth rates are characterized by the deposition method, and their values are 1.9, 1.1 and 0.64 in low pressure CVD, plasma CVD and sputtering method, respectively. These values can be explained by the step coverage decided by the deposition method. Furthermore, the particle growth on imaginary-particle was compared with that on the real-particle. It is clear that the growth mechanism of the real-particle is closely similar to that of imaginary-particle, and the study by use of the imaginary-particle is very effective to make clear the mechanism of particle growth. Therefore, the particle size which should be controlled before deposition process is necessary to be decided by counting the particle growth shown in this paper.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Particle Growth Caused by Film Deposition in VLSI Manufacturing Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 312
EP - 316
AU - Yoshimasa TAKII
AU - Yuichi MIYOSHI
AU - Yuichi HIROFUJI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1996
AB - In order to simulate the mechanism of particle growth by film deposition, imaginary-particle formation method has been newly developed. By using this formation method, the particle size, the particle height and the position of particle on a wafer could be controlled very easily. In this study, the imaginary-particles of various size larger than 0.15 micron and various height were formed on a wafer. By using these imaginary-particles, the effects of a deposition method, a film thickness, a particle size and a particle height upon the particle growth were investigated. As deposition methods, low pressure CVD method, plasma CVD method and sputtering method were compared. As a result, in all deposition method, it's clear that the particle growth doesn't depend on the initial size, and is proportional to the film thickness. Their particle growth rates are characterized by the deposition method, and their values are 1.9, 1.1 and 0.64 in low pressure CVD, plasma CVD and sputtering method, respectively. These values can be explained by the step coverage decided by the deposition method. Furthermore, the particle growth on imaginary-particle was compared with that on the real-particle. It is clear that the growth mechanism of the real-particle is closely similar to that of imaginary-particle, and the study by use of the imaginary-particle is very effective to make clear the mechanism of particle growth. Therefore, the particle size which should be controlled before deposition process is necessary to be decided by counting the particle growth shown in this paper.
ER -