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[Keyword] film deposition(4hit)

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  • Study on Analysis and Fabrication Conditions of Horizontal SiO2 Slot Waveguides Using Nb2O5

    Yoshiki HAYAMA  Katsumi NAKATSUHARA  Shinta UCHIBORI  Takeshi NISHIZAWA  

     
    PAPER

      Pubricized:
    2020/06/05
      Vol:
    E103-C No:11
      Page(s):
    669-678

    Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.

  • Aerosol Deposition on Transparent Electro-Optic Films for Optical Modulators

    Masafumi NAKADA  Hiroki TSUDA  Keishi OHASHI  Jun AKEDO  

     
    INVITED PAPER

      Vol:
    E90-C No:1
      Page(s):
    36-40

    Complex thin oxide films with electro-optic (EO) properties are promising for use in advanced optical devices because of their large EO effect. We developed a method of aerosol deposition (AD) for fabricating EO films. The mechanism for AD is based on the solidification by impact of submicron particles onto a substrate. Since particles in AD films preserve their crystalline structure during the formation of film, epitaxial growth is not necessary for exhibiting the EO effect. Highly transparent Pb(Zr, Ti)O3 films, which have acceptable transmittance loss for use as optical devices, were directly deposited on glass substrates by AD. We found the Pb(Zr, Ti)O3 film by AD produced a fairly high EO coefficient (>150 pm/V), approximately 10 times larger than that of LiNbO3. A Fabry-Perot (FP) optical modulator was developed with EO films fabricated by AD. We demonstrated the modulation of optical intensity with an electrical field applied to an EO film made of ferroelectric Pb (Zr, Ti)O3.

  • An Optical Fiber Sensor for the Measurement of Elevated Temperatures

    Theodore F. MORSE  Yifei HE  Fei LUO  

     
    PAPER-Physical and Mechanical Sensors

      Vol:
    E83-C No:3
      Page(s):
    298-302

    A novel optical technique for the measurement of temperature is proposed. This is accomplished by depositing alternating 1/4 wave layers of silicon nitride and silicon-rich silicon nitride at the end of an optical fiber. These layers of alternating refractive index form the equivalent of a Bragg grating of a high temperature material. When the fiber and the Bragg grating are heated, the Bragg stack expands, and there is a change in the reflective peak wavelength of this wave stack. Thus, the wavelength of peak reflectivity is a function of temperature. Currently, the 15 nm spectral width of the Bragg stacks is achieved in our laboratory, which is conveniently monitored with a CCD solid state spectrometer and the temperature sensor probes can be also multiplexed at separated specific reflection wavelength. In the experiment, the temperatures in excess of 1,100 centigrade have been measured with a resolution of less than 3 centigrade degree.

  • Particle Growth Caused by Film Deposition in VLSI Manufacturing Process

    Yoshimasa TAKII  Yuichi MIYOSHI  Yuichi HIROFUJI  

     
    PAPER-Particle/Defect Control and Analysis

      Vol:
    E79-C No:3
      Page(s):
    312-316

    In order to simulate the mechanism of particle growth by film deposition, imaginary-particle formation method has been newly developed. By using this formation method, the particle size, the particle height and the position of particle on a wafer could be controlled very easily. In this study, the imaginary-particles of various size larger than 0.15 micron and various height were formed on a wafer. By using these imaginary-particles, the effects of a deposition method, a film thickness, a particle size and a particle height upon the particle growth were investigated. As deposition methods, low pressure CVD method, plasma CVD method and sputtering method were compared. As a result, in all deposition method, it's clear that the particle growth doesn't depend on the initial size, and is proportional to the film thickness. Their particle growth rates are characterized by the deposition method, and their values are 1.9, 1.1 and 0.64 in low pressure CVD, plasma CVD and sputtering method, respectively. These values can be explained by the step coverage decided by the deposition method. Furthermore, the particle growth on imaginary-particle was compared with that on the real-particle. It is clear that the growth mechanism of the real-particle is closely similar to that of imaginary-particle, and the study by use of the imaginary-particle is very effective to make clear the mechanism of particle growth. Therefore, the particle size which should be controlled before deposition process is necessary to be decided by counting the particle growth shown in this paper.