IEICE TRANSACTIONS on Electronics
L-Band SPDT Switch Using Si-MOSFET
Summary :
A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.5 pp.636-643
- Publication Date
- 1996/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
- Category
- Active Devices
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Keyword
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Yoshitada IYAMA, Noriharu SUEMATSU, Tomonori SHIGEMATSU, Takao MORIWAKI, Tatsuhiko IKEDA, "L-Band SPDT Switch Using Si-MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 5, pp. 636-643, May 1996, doi: .
Abstract: A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_5_636/_p
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@ARTICLE{e79-c_5_636,
author={Yoshitada IYAMA, Noriharu SUEMATSU, Tomonori SHIGEMATSU, Takao MORIWAKI, Tatsuhiko IKEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={L-Band SPDT Switch Using Si-MOSFET},
year={1996},
volume={E79-C},
number={5},
pages={636-643},
abstract={A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - L-Band SPDT Switch Using Si-MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 636
EP - 643
AU - Yoshitada IYAMA
AU - Noriharu SUEMATSU
AU - Tomonori SHIGEMATSU
AU - Takao MORIWAKI
AU - Tatsuhiko IKEDA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1996
AB - A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.
ER -
English
