IEICE TRANSACTIONS on Electronics
A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process
Summary :
Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.8 pp.1097-1102
- Publication Date
- 1996/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Liquid-Crystal Displays)
- Category
Authors
Kikuo ONO
Takashi SUZUKI
Hiroki SAKUTA
Kenichi ONISAWA
Minoru HIROSHIMA
Tooru SASAKI
Makoto TSUMURA
Nobutake KONISHI
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Kikuo ONO, Takashi SUZUKI, Hiroki SAKUTA, Kenichi ONISAWA, Minoru HIROSHIMA, Tooru SASAKI, Makoto TSUMURA, Nobutake KONISHI, "A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 8, pp. 1097-1102, August 1996, doi: .
Abstract: Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_8_1097/_p
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@ARTICLE{e79-c_8_1097,
author={Kikuo ONO, Takashi SUZUKI, Hiroki SAKUTA, Kenichi ONISAWA, Minoru HIROSHIMA, Tooru SASAKI, Makoto TSUMURA, Nobutake KONISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process},
year={1996},
volume={E79-C},
number={8},
pages={1097-1102},
abstract={Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 1097
EP - 1102
AU - Kikuo ONO
AU - Takashi SUZUKI
AU - Hiroki SAKUTA
AU - Kenichi ONISAWA
AU - Minoru HIROSHIMA
AU - Tooru SASAKI
AU - Makoto TSUMURA
AU - Nobutake KONISHI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1996
AB - Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.
ER -
English
