Surface Tunnel Transistors with Multiple Interband Tunnel Junctions

Toshio BABA; Tetsuya UEMURA

Surface Tunnel Transistors with Multiple Interband Tunnel Junctions

Toshio BABA, Tetsuya UEMURA

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New functional surface tunnel transistors (STTs) with multiple interband-tunnel-junctions in a symmetric source-to-drain structure are proposed to reduce the number of fabrication steps and to increase functionality. These devices have p⁺/n⁺ interband tunnel junctions in series between a p⁺ source and a p⁺ drain through n⁺ channels. We successfully fabricated GaAs-based multiple-junction STTs (MJ-STTs) using molecular-beam epitaxy regrowth. This fabrication method eliminates the need for two of the photo-masks in the conventional process for asymmetric planar STTs. In the preliminary experiments using multiple-junction p⁺/n⁺ diodes, we found that the peak-voltage increment in negative-differential-resistance (NDR) characteristics due to the reverse-biased tunnel junction in negligible, while the first-peak voltage is roughly proportional to the number of forward-biased tunnel junctions. Moreover, the number of NDR characteristics are completely determined by the number of tunnel junctions. The fabricated STTs with multiple junctions, up to eight junctions, exhibited clear transistor operation with multiple NDR characteristics, which were symmetric with the drain bias. These results indicate that any number of gate-controlled NDR characteristics can be realized in MJ-STTs by using an appropriate number of tunnel junctions in series. In addition, as an example of a functional circuit using MJ-STTs, we implemented a tri-stable circuit with a four-junction STT and a load resistor connected in series. The tri-stable operation was confirmed by applying a combination of a reset pulse and a set pulse for each stable point.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.7 pp.875-880

Publication Date: 1997/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)

Category: Quantum Devices

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Toshio BABA, Tetsuya UEMURA, "Surface Tunnel Transistors with Multiple Interband Tunnel Junctions" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 7, pp. 875-880, July 1997, doi: .
Abstract: New functional surface tunnel transistors (STTs) with multiple interband-tunnel-junctions in a symmetric source-to-drain structure are proposed to reduce the number of fabrication steps and to increase functionality. These devices have p⁺/n⁺ interband tunnel junctions in series between a p⁺ source and a p⁺ drain through n⁺ channels. We successfully fabricated GaAs-based multiple-junction STTs (MJ-STTs) using molecular-beam epitaxy regrowth. This fabrication method eliminates the need for two of the photo-masks in the conventional process for asymmetric planar STTs. In the preliminary experiments using multiple-junction p⁺/n⁺ diodes, we found that the peak-voltage increment in negative-differential-resistance (NDR) characteristics due to the reverse-biased tunnel junction in negligible, while the first-peak voltage is roughly proportional to the number of forward-biased tunnel junctions. Moreover, the number of NDR characteristics are completely determined by the number of tunnel junctions. The fabricated STTs with multiple junctions, up to eight junctions, exhibited clear transistor operation with multiple NDR characteristics, which were symmetric with the drain bias. These results indicate that any number of gate-controlled NDR characteristics can be realized in MJ-STTs by using an appropriate number of tunnel junctions in series. In addition, as an example of a functional circuit using MJ-STTs, we implemented a tri-stable circuit with a four-junction STT and a load resistor connected in series. The tri-stable operation was confirmed by applying a combination of a reset pulse and a set pulse for each stable point.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_7_875/_p

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@ARTICLE{e80-c_7_875,
author={Toshio BABA, Tetsuya UEMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Surface Tunnel Transistors with Multiple Interband Tunnel Junctions},
year={1997},
volume={E80-C},
number={7},
pages={875-880},
abstract={New functional surface tunnel transistors (STTs) with multiple interband-tunnel-junctions in a symmetric source-to-drain structure are proposed to reduce the number of fabrication steps and to increase functionality. These devices have p⁺/n⁺ interband tunnel junctions in series between a p⁺ source and a p⁺ drain through n⁺ channels. We successfully fabricated GaAs-based multiple-junction STTs (MJ-STTs) using molecular-beam epitaxy regrowth. This fabrication method eliminates the need for two of the photo-masks in the conventional process for asymmetric planar STTs. In the preliminary experiments using multiple-junction p⁺/n⁺ diodes, we found that the peak-voltage increment in negative-differential-resistance (NDR) characteristics due to the reverse-biased tunnel junction in negligible, while the first-peak voltage is roughly proportional to the number of forward-biased tunnel junctions. Moreover, the number of NDR characteristics are completely determined by the number of tunnel junctions. The fabricated STTs with multiple junctions, up to eight junctions, exhibited clear transistor operation with multiple NDR characteristics, which were symmetric with the drain bias. These results indicate that any number of gate-controlled NDR characteristics can be realized in MJ-STTs by using an appropriate number of tunnel junctions in series. In addition, as an example of a functional circuit using MJ-STTs, we implemented a tri-stable circuit with a four-junction STT and a load resistor connected in series. The tri-stable operation was confirmed by applying a combination of a reset pulse and a set pulse for each stable point.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Surface Tunnel Transistors with Multiple Interband Tunnel Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 875
EP - 880
AU - Toshio BABA
AU - Tetsuya UEMURA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1997
AB - New functional surface tunnel transistors (STTs) with multiple interband-tunnel-junctions in a symmetric source-to-drain structure are proposed to reduce the number of fabrication steps and to increase functionality. These devices have p⁺/n⁺ interband tunnel junctions in series between a p⁺ source and a p⁺ drain through n⁺ channels. We successfully fabricated GaAs-based multiple-junction STTs (MJ-STTs) using molecular-beam epitaxy regrowth. This fabrication method eliminates the need for two of the photo-masks in the conventional process for asymmetric planar STTs. In the preliminary experiments using multiple-junction p⁺/n⁺ diodes, we found that the peak-voltage increment in negative-differential-resistance (NDR) characteristics due to the reverse-biased tunnel junction in negligible, while the first-peak voltage is roughly proportional to the number of forward-biased tunnel junctions. Moreover, the number of NDR characteristics are completely determined by the number of tunnel junctions. The fabricated STTs with multiple junctions, up to eight junctions, exhibited clear transistor operation with multiple NDR characteristics, which were symmetric with the drain bias. These results indicate that any number of gate-controlled NDR characteristics can be realized in MJ-STTs by using an appropriate number of tunnel junctions in series. In addition, as an example of a functional circuit using MJ-STTs, we implemented a tri-stable circuit with a four-junction STT and a load resistor connected in series. The tri-stable operation was confirmed by applying a combination of a reset pulse and a set pulse for each stable point.
ER -