Study of Ferroelectric Materials for Ferroelectric Memory FET

Yoshikazu FUJIMORI; Naoki IZUMI; Takashi NAKAMURA; Akira KAMISAWA

Study of Ferroelectric Materials for Ferroelectric Memory FET

Yoshikazu FUJIMORI, Naoki IZUMI, Takashi NAKAMURA, Akira KAMISAWA

Full Text Views

0

Cite this

Summary :

In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr₂Nb₂O₇ (SNO) and Sr₂(Ta_1-xNb_x)₂O₇ (STNO) were prepared by the sol-gel method on Pt/IrO₂ electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm² and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.572-576

Publication Date: 1998/04/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)

Category

Cite this

Copy

Yoshikazu FUJIMORI, Naoki IZUMI, Takashi NAKAMURA, Akira KAMISAWA, "Study of Ferroelectric Materials for Ferroelectric Memory FET" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 4, pp. 572-576, April 1998, doi: .
Abstract: In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr₂Nb₂O₇ (SNO) and Sr₂(Ta_1-xNb_x)₂O₇ (STNO) were prepared by the sol-gel method on Pt/IrO₂ electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm² and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_572/_p

Copy

@ARTICLE{e81-c_4_572,
author={Yoshikazu FUJIMORI, Naoki IZUMI, Takashi NAKAMURA, Akira KAMISAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study of Ferroelectric Materials for Ferroelectric Memory FET},
year={1998},
volume={E81-C},
number={4},
pages={572-576},
abstract={In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr₂Nb₂O₇ (SNO) and Sr₂(Ta_1-xNb_x)₂O₇ (STNO) were prepared by the sol-gel method on Pt/IrO₂ electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm² and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.},
keywords={},
doi={},
ISSN={},
month={April},}

Copy

TY - JOUR
TI - Study of Ferroelectric Materials for Ferroelectric Memory FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 572
EP - 576
AU - Yoshikazu FUJIMORI
AU - Naoki IZUMI
AU - Takashi NAKAMURA
AU - Akira KAMISAWA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr₂Nb₂O₇ (SNO) and Sr₂(Ta_1-xNb_x)₂O₇ (STNO) were prepared by the sol-gel method on Pt/IrO₂ electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm² and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.
ER -