Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures

Tomohisa MIZUNO; Naoharu SUGIYAMA; Atsushi KUROBE; Shin-ichi TAKAGI

Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures

Tomohisa MIZUNO, Naoharu SUGIYAMA, Atsushi KUROBE, Shin-ichi TAKAGI

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We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.

Publication: IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1423-1430

Publication Date: 2001/10/01

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Type of Manuscript: Special Section INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))

Category: SiGe HBTs & FETs

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Tomohisa MIZUNO, Naoharu SUGIYAMA, Atsushi KUROBE, Shin-ichi TAKAGI, "Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures" in IEICE TRANSACTIONS on Electronics, vol. E84-C, no. 10, pp. 1423-1430, October 2001, doi: .
Abstract: We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1423/_p

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@ARTICLE{e84-c_10_1423,
author={Tomohisa MIZUNO, Naoharu SUGIYAMA, Atsushi KUROBE, Shin-ichi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures},
year={2001},
volume={E84-C},
number={10},
pages={1423-1430},
abstract={We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1423
EP - 1430
AU - Tomohisa MIZUNO
AU - Naoharu SUGIYAMA
AU - Atsushi KUROBE
AU - Shin-ichi TAKAGI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.
ER -