Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics

Shin-ichi TAKAGI; Tomohisa MIZUNO; Naoharu SUGIYAMA; Tsutomu TEZUKA; Atsushi KUROBE

Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics

Shin-ichi TAKAGI, Tomohisa MIZUNO, Naoharu SUGIYAMA, Tsutomu TEZUKA, Atsushi KUROBE

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An effective way to realize scaled CMOS with both requirements of high current drive and low supply voltage is to introduce high mobility channel such as strained Si. This paper proposes a new device structure using the strained-Si channel, strained-Si-on-Insulator (strained-SOI) MOSFET, applicable to sub-100 nm Si CMOS technology nodes. The device structure and the advantages of strained-SOI MOSFETs are presented. It is demonstrated that strained-SOI MOSFETs are successfully fabricated by combining SIMOX technology with re-growth of strained Si and that n- and p-MOSFETs have mobility of 1.6 and 1.3 times higher than the universal one, respectively. Furthermore, it is also shown that ultra-thin SiGe-on-Insulator (SGOI) virtual substrates with higher Ge content, necessary to further increase mobility and to realize fully-depleted SOI MOSFETs, can be made by oxidation of SGOI structure with lower Ge content.

Publication: IEICE TRANSACTIONS on Electronics Vol.E84-C No.8 pp.1043-1050

Publication Date: 2001/08/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Silicon Nanodevices)

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Shin-ichi TAKAGI, Tomohisa MIZUNO, Naoharu SUGIYAMA, Tsutomu TEZUKA, Atsushi KUROBE, "Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics" in IEICE TRANSACTIONS on Electronics, vol. E84-C, no. 8, pp. 1043-1050, August 2001, doi: .
Abstract: An effective way to realize scaled CMOS with both requirements of high current drive and low supply voltage is to introduce high mobility channel such as strained Si. This paper proposes a new device structure using the strained-Si channel, strained-Si-on-Insulator (strained-SOI) MOSFET, applicable to sub-100 nm Si CMOS technology nodes. The device structure and the advantages of strained-SOI MOSFETs are presented. It is demonstrated that strained-SOI MOSFETs are successfully fabricated by combining SIMOX technology with re-growth of strained Si and that n- and p-MOSFETs have mobility of 1.6 and 1.3 times higher than the universal one, respectively. Furthermore, it is also shown that ultra-thin SiGe-on-Insulator (SGOI) virtual substrates with higher Ge content, necessary to further increase mobility and to realize fully-depleted SOI MOSFETs, can be made by oxidation of SGOI structure with lower Ge content.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1043/_p

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@ARTICLE{e84-c_8_1043,
author={Shin-ichi TAKAGI, Tomohisa MIZUNO, Naoharu SUGIYAMA, Tsutomu TEZUKA, Atsushi KUROBE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics},
year={2001},
volume={E84-C},
number={8},
pages={1043-1050},
abstract={An effective way to realize scaled CMOS with both requirements of high current drive and low supply voltage is to introduce high mobility channel such as strained Si. This paper proposes a new device structure using the strained-Si channel, strained-Si-on-Insulator (strained-SOI) MOSFET, applicable to sub-100 nm Si CMOS technology nodes. The device structure and the advantages of strained-SOI MOSFETs are presented. It is demonstrated that strained-SOI MOSFETs are successfully fabricated by combining SIMOX technology with re-growth of strained Si and that n- and p-MOSFETs have mobility of 1.6 and 1.3 times higher than the universal one, respectively. Furthermore, it is also shown that ultra-thin SiGe-on-Insulator (SGOI) virtual substrates with higher Ge content, necessary to further increase mobility and to realize fully-depleted SOI MOSFETs, can be made by oxidation of SGOI structure with lower Ge content.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 1043
EP - 1050
AU - Shin-ichi TAKAGI
AU - Tomohisa MIZUNO
AU - Naoharu SUGIYAMA
AU - Tsutomu TEZUKA
AU - Atsushi KUROBE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - An effective way to realize scaled CMOS with both requirements of high current drive and low supply voltage is to introduce high mobility channel such as strained Si. This paper proposes a new device structure using the strained-Si channel, strained-Si-on-Insulator (strained-SOI) MOSFET, applicable to sub-100 nm Si CMOS technology nodes. The device structure and the advantages of strained-SOI MOSFETs are presented. It is demonstrated that strained-SOI MOSFETs are successfully fabricated by combining SIMOX technology with re-growth of strained Si and that n- and p-MOSFETs have mobility of 1.6 and 1.3 times higher than the universal one, respectively. Furthermore, it is also shown that ultra-thin SiGe-on-Insulator (SGOI) virtual substrates with higher Ge content, necessary to further increase mobility and to realize fully-depleted SOI MOSFETs, can be made by oxidation of SGOI structure with lower Ge content.
ER -