Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs

Hiromichi TAKAOKA; Yoshinobu SATOU; Takaomi SUZUKI; Takuya SASAKI; Hiroshi TANABE; Hiroshi HAYAMA

Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs

Hiromichi TAKAOKA, Yoshinobu SATOU, Takaomi SUZUKI, Takuya SASAKI, Hiroshi TANABE, Hiroshi HAYAMA

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We have successfully produced laterally-grown grains on large (300 350 mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm²/Vs (n-ch. TFTs) and 230 cm²/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm²).

Publication: IEICE TRANSACTIONS on Electronics Vol.E85-C No.11 pp.1860-1865

Publication Date: 2002/11/01

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Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays)

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Hiromichi TAKAOKA, Yoshinobu SATOU, Takaomi SUZUKI, Takuya SASAKI, Hiroshi TANABE, Hiroshi HAYAMA, "Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs" in IEICE TRANSACTIONS on Electronics, vol. E85-C, no. 11, pp. 1860-1865, November 2002, doi: .
Abstract: We have successfully produced laterally-grown grains on large (300 350 mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm²/Vs (n-ch. TFTs) and 230 cm²/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm²).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_11_1860/_p

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@ARTICLE{e85-c_11_1860,
author={Hiromichi TAKAOKA, Yoshinobu SATOU, Takaomi SUZUKI, Takuya SASAKI, Hiroshi TANABE, Hiroshi HAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs},
year={2002},
volume={E85-C},
number={11},
pages={1860-1865},
abstract={We have successfully produced laterally-grown grains on large (300 350 mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm²/Vs (n-ch. TFTs) and 230 cm²/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm²).},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1860
EP - 1865
AU - Hiromichi TAKAOKA
AU - Yoshinobu SATOU
AU - Takaomi SUZUKI
AU - Takuya SASAKI
AU - Hiroshi TANABE
AU - Hiroshi HAYAMA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2002
AB - We have successfully produced laterally-grown grains on large (300 350 mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm²/Vs (n-ch. TFTs) and 230 cm²/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm²).
ER -