IEICE TRANSACTIONS on Electronics
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET
Summary :
We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NF min ) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NF min ) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13 dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2058-2064
- Publication Date
- 2003/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
- Category
Authors
Yutaka HIROSE
Yoshito IKEDA
Motonori ISHII
Tomohiro MURATA
Kaoru INOUE
Tsuyoshi TANAKA
Hiroyasu ISHIKAWA
Takashi EGAWA
Takashi JIMBO
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Yutaka HIROSE, Yoshito IKEDA, Motonori ISHII, Tomohiro MURATA, Kaoru INOUE, Tsuyoshi TANAKA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, "Low Noise and Low Distortion Performances of an AlGaN/GaN HFET" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2058-2064, October 2003, doi: .
Abstract: We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NF min ) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NF min ) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13 dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2058/_p
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@ARTICLE{e86-c_10_2058,
author={Yutaka HIROSE, Yoshito IKEDA, Motonori ISHII, Tomohiro MURATA, Kaoru INOUE, Tsuyoshi TANAKA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Noise and Low Distortion Performances of an AlGaN/GaN HFET},
year={2003},
volume={E86-C},
number={10},
pages={2058-2064},
abstract={We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NF min ) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NF min ) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13 dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Low Noise and Low Distortion Performances of an AlGaN/GaN HFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 2058
EP - 2064
AU - Yutaka HIROSE
AU - Yoshito IKEDA
AU - Motonori ISHII
AU - Tomohiro MURATA
AU - Kaoru INOUE
AU - Tsuyoshi TANAKA
AU - Hiroyasu ISHIKAWA
AU - Takashi EGAWA
AU - Takashi JIMBO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NF min ) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NF min ) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13 dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.
ER -
English
