We have integrated a phase change random access memory (PRAM), completely based on 0.24 µm-CMOS technologies using nitrogen doped GeSbTe films. The Ge2Sb2Te5 (GST) thin films are well known to play a critical role in writing current of PRAM. Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we found the resistivity of GST film can be controlled with nitrogen doping. Doping nitrogen to GST film successfully reduced writing current. A 0.24 µm PRAM using N-doped GST films were demonstrated with writing pulse of 0.8 mA-50 ns for RESET and 0.4 mA-100 ns for SET. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. Endurance performance of fully integrated PRAM using N-doped GST shows no fail bit up to 2E9 cycles. Allowing 1% failures, extrapolation to 85
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Hideki HORII, Jeong Hee PARK, Ji Hye YI, Bong Jin KUH, Yong Ho HA, "A 0.24 µm PRAM Cell Technology Using N-Doped GeSbTe Films" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 10, pp. 1673-1678, October 2004, doi: .
Abstract: We have integrated a phase change random access memory (PRAM), completely based on 0.24 µm-CMOS technologies using nitrogen doped GeSbTe films. The Ge2Sb2Te5 (GST) thin films are well known to play a critical role in writing current of PRAM. Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we found the resistivity of GST film can be controlled with nitrogen doping. Doping nitrogen to GST film successfully reduced writing current. A 0.24 µm PRAM using N-doped GST films were demonstrated with writing pulse of 0.8 mA-50 ns for RESET and 0.4 mA-100 ns for SET. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. Endurance performance of fully integrated PRAM using N-doped GST shows no fail bit up to 2E9 cycles. Allowing 1% failures, extrapolation to 85
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_10_1673/_p
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@ARTICLE{e87-c_10_1673,
author={Hideki HORII, Jeong Hee PARK, Ji Hye YI, Bong Jin KUH, Yong Ho HA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.24 µm PRAM Cell Technology Using N-Doped GeSbTe Films},
year={2004},
volume={E87-C},
number={10},
pages={1673-1678},
abstract={We have integrated a phase change random access memory (PRAM), completely based on 0.24 µm-CMOS technologies using nitrogen doped GeSbTe films. The Ge2Sb2Te5 (GST) thin films are well known to play a critical role in writing current of PRAM. Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we found the resistivity of GST film can be controlled with nitrogen doping. Doping nitrogen to GST film successfully reduced writing current. A 0.24 µm PRAM using N-doped GST films were demonstrated with writing pulse of 0.8 mA-50 ns for RESET and 0.4 mA-100 ns for SET. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. Endurance performance of fully integrated PRAM using N-doped GST shows no fail bit up to 2E9 cycles. Allowing 1% failures, extrapolation to 85
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A 0.24 µm PRAM Cell Technology Using N-Doped GeSbTe Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1673
EP - 1678
AU - Hideki HORII
AU - Jeong Hee PARK
AU - Ji Hye YI
AU - Bong Jin KUH
AU - Yong Ho HA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2004
AB - We have integrated a phase change random access memory (PRAM), completely based on 0.24 µm-CMOS technologies using nitrogen doped GeSbTe films. The Ge2Sb2Te5 (GST) thin films are well known to play a critical role in writing current of PRAM. Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we found the resistivity of GST film can be controlled with nitrogen doping. Doping nitrogen to GST film successfully reduced writing current. A 0.24 µm PRAM using N-doped GST films were demonstrated with writing pulse of 0.8 mA-50 ns for RESET and 0.4 mA-100 ns for SET. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. Endurance performance of fully integrated PRAM using N-doped GST shows no fail bit up to 2E9 cycles. Allowing 1% failures, extrapolation to 85
ER -