In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.

In this paper, the influence of high-temperature sputtering on the nitrogen-doped (N-doped) LaB6 thin film formation utilizing RF sputtering was investigated. The N-doped LaB6/SiO2/p-Si(100) MOS diode and N-doped LaB6/p-Si(100) of Schottky diode were fabricated. A 30 nm thick N-doped LaB6 thin film was deposited from room temperature (RT) to 150°C. It was found that the resistivity was decreased from 1.5 mΩcm to 0.8 mΩcm by increasing deposition temperature from RT to 150°C. The variation of work function was significantly decreased in case that N-doped LaB6 thin film deposited at 150°C. Furthermore, Schottky characteristic was observed by increasing deposition temperature to 150°C. In addition, the crystallinity of N-doped LaB6 thin film was improved by increasing deposition temperature.

In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.

In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.

Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.

We have integrated a phase change random access memory (PRAM), completely based on 0.24 µm-CMOS technologies using nitrogen doped GeSbTe films. The Ge2Sb2Te5 (GST) thin films are well known to play a critical role in writing current of PRAM. Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we found the resistivity of GST film can be controlled with nitrogen doping. Doping nitrogen to GST film successfully reduced writing current. A 0.24 µm PRAM using N-doped GST films were demonstrated with writing pulse of 0.8 mA-50 ns for RESET and 0.4 mA-100 ns for SET. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. Endurance performance of fully integrated PRAM using N-doped GST shows no fail bit up to 2E9 cycles. Allowing 1% failures, extrapolation to 85 indicates retention time of 2 years. All the results show that PRAM is one of the most promising candidates in the market for the next generation memories.

A tunable optical Fabry-Perrot filter was designed by setting a single-mode optical fiber normal to the diaphragm of a capacitive pressure sensor. The silicon diaphragm is deflected by the electrostatic force generated by applying a voltage to the capacitive electrodes. According to the movement of the diaphragm, the peak wavelength changed from 1546 to 1551 nm when applied voltage was increased from 20 to 50 V. The relationship of the wavelength change to the applied voltage was derived from the silicon diaphragm deflection theory. That measured change of the wavelength agrees well with the wavelength change calculated from this relationship. The commercial pressure sensors are expected to be able to be used as a tunable optical filter.

We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O+) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O+-implanted extrinsic base layers. The highly resistive O+-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency fT of 68 GHz and a maximum oscillation frequency fmax of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher fmax of 110 GHz due to reduced base/collector capacitance CBC and its fmax remains above 100 GHz, even at a low collector current of 1 mA. The CBC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.