Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving fT) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high fT, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.
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Shinichi TANAKA, Yoshifumi IKENAGA, Akira FUJIHARA, "Lateral and Vertical Scaling of High-fmax InP-Based HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 6, pp. 924-928, June 2004, doi: .
Abstract: Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving fT) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high fT, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_6_924/_p
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@ARTICLE{e87-c_6_924,
author={Shinichi TANAKA, Yoshifumi IKENAGA, Akira FUJIHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Lateral and Vertical Scaling of High-fmax InP-Based HBTs},
year={2004},
volume={E87-C},
number={6},
pages={924-928},
abstract={Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving fT) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high fT, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Lateral and Vertical Scaling of High-fmax InP-Based HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 924
EP - 928
AU - Shinichi TANAKA
AU - Yoshifumi IKENAGA
AU - Akira FUJIHARA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2004
AB - Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving fT) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high fT, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.
ER -