A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.
Masaru SATO
Fujitsu
Yusuke KUMAZAKI
Fujitsu
Naoya OKAMOTO
Fujitsu
Toshihiro OHKI
Fujitsu
Naoko KURAHASHI
Fujitsu
Masato NISHIMORI
Fujitsu
Atsushi YAMADA
Fujitsu
Junji KOTANI
Fujitsu
Naoki HARA
Fujitsu
Keiji WATANABE
Fujitsu
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Masaru SATO, Yusuke KUMAZAKI, Naoya OKAMOTO, Toshihiro OHKI, Naoko KURAHASHI, Masato NISHIMORI, Atsushi YAMADA, Junji KOTANI, Naoki HARA, Keiji WATANABE, "Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 10, pp. 605-613, October 2023, doi: 10.1587/transele.2022ECP5046.
Abstract: A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5046/_p
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@ARTICLE{e106-c_10_605,
author={Masaru SATO, Yusuke KUMAZAKI, Naoya OKAMOTO, Toshihiro OHKI, Naoko KURAHASHI, Masato NISHIMORI, Atsushi YAMADA, Junji KOTANI, Naoki HARA, Keiji WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier},
year={2023},
volume={E106-C},
number={10},
pages={605-613},
abstract={A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.},
keywords={},
doi={10.1587/transele.2022ECP5046},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 605
EP - 613
AU - Masaru SATO
AU - Yusuke KUMAZAKI
AU - Naoya OKAMOTO
AU - Toshihiro OHKI
AU - Naoko KURAHASHI
AU - Masato NISHIMORI
AU - Atsushi YAMADA
AU - Junji KOTANI
AU - Naoki HARA
AU - Keiji WATANABE
PY - 2023
DO - 10.1587/transele.2022ECP5046
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2023
AB - A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.
ER -