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Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

Masaru SATO, Yusuke KUMAZAKI, Naoya OKAMOTO, Toshihiro OHKI, Naoko KURAHASHI, Masato NISHIMORI, Atsushi YAMADA, Junji KOTANI, Naoki HARA, Keiji WATANABE

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Summary :

A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.

Publication
IEICE TRANSACTIONS on Electronics Vol.E106-C No.10 pp.605-613
Publication Date
2023/10/01
Publicized
2023/04/13
Online ISSN
1745-1353
DOI
10.1587/transele.2022ECP5046
Type of Manuscript
PAPER
Category
Microwaves, Millimeter-Waves

Authors

Masaru SATO
  Fujitsu
Yusuke KUMAZAKI
  Fujitsu
Naoya OKAMOTO
  Fujitsu
Toshihiro OHKI
  Fujitsu
Naoko KURAHASHI
  Fujitsu
Masato NISHIMORI
  Fujitsu
Atsushi YAMADA
  Fujitsu
Junji KOTANI
  Fujitsu
Naoki HARA
  Fujitsu
Keiji WATANABE
  Fujitsu

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